LTC3603 Linear Dimensions Semiconductor, LTC3603 Datasheet - Page 3

• Manufacturer Part Number: LTC3603
• Description: Monolithic Synchronous Step-Down Regulator
• Manufacturer: Linear Dimensions Semiconductor

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ELECTRICAL CHARACTERISTICS
SYMBOL
ΔV
R
I
g
I
INTV
t
V
I
f
f
R
I
I
V
V
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC3603E is guaranteed to meet performance specifi cations
from 0°C to 85°C. Specifi cations over the –40°C to 85°C operating
junction temperature range are assured by design, characterization and
correlation with statistical process controls. The LTC3603I is guaranteed
over the –40°C to 125°C operating junction temperature range.
Note 3: The LTC3603 is tested in a feedback loop that adjusts V
achieve a specifi ed error amplifi er output voltage (I
TYPICAL PERFORMANCE CHARACTERISTICS
junction temperature range, otherwise specifi cations are at T
FB
S
ON, MIN
TRACK/SS
OSC
SYNC
LIM
LSW
m
RUN
UVLO
UVLO, HYS
PGOOD
DS(ON)
PGOOD
CC
500mA/DIV
INDUCTOR
50mV/DIV
CURRENT
VOLTAGE
OUTPUT
PARAMETER
Power Good Range
Power Good Resistance
FB Input Bias Current
Transconductance Amplifi er g
Supply Current
V
Minimum Controllable ON-Time
RUN Pin ON Threshold
TRACK/SS Pull-Up Current
Oscillator Frequency
SYNC Capture Range
Top Switch On-Resistance
Bottom Switch On-Resistance
Peak Current Limit
Switch Leakage Current
INTV
INTV
Burst Mode Operation
V
V
LOAD = 50mA
Active Mode
Sleep Mode
Shutdown
CC
IN
OUT
LDO Output Voltage
= 12V
CC
CC
= 3.3V
Undervoltage Lockout
Undervoltage Lockout Hysteresis
10μs/DIV
TH
m
).
3603 G01
FB
to
CONDITIONS
(Note 4)
V
R
INTV
The
RUN
T
= 105k
A
CC
= 25°C. V
Rising
l
Ramping Up
denotes the specifi cations which apply over the full operating
Note 4: Dynamic supply current is higher due to the internal gate charge
being delivered at the switching frequency.
Note 5: T
dissipation as follows: T
Note 6: This IC includes overtemperature protection that is intended
to protect the device during momentary overload conditions. Junction
temperature will exceed 125°C when overtemperature protection is active.
Continuous operation above the specifi ed maximum operating junction
temperature may impair device reliability.
Note 7: This limit indicates the current density limitations of the internal
metallization and it is not tested in production.
IN
100mV/DIV
CURRENT
= 12V unless otherwise specifi ed.
VOLTAGE
OUTPUT
1A/DIV
LOAD
J
is calculated from the ambient temperature T
Load Step Transient
Forced Continuous
V
V
IN
OUT
= 12V
= 3.3V
J
= T
A
l
l
10μs/DIV
+ (P
D
)(θ
0.85
MIN
4.7
0.4
0.3
3.8
4.1
JA
ºC/W).
1.25
TYP
±10
500
700
1.7
0.2
4.9
0.7
4.5
0.1
4.2
55
10
75
95
85
45
1
3603 G02
LTC3603
A
and the power
MAX
1.15
±12
700
100
115
5.1
5.2
4.3
80
1
1
3
1
UNITS
3
3603f
MHz
MHz
mΩ
mΩ
mS
mV
nA
μA
μA
μA
μA
μA
ns
%
Ω
V
V
A
V