RM50 Mitsubishi Electric Semiconductor, RM50 Datasheet - Page 2

• Manufacturer Part Number: RM50
• Description: HIGH SPEED SWITCHING USE INSULATED TYPE
• Manufacturer: Mitsubishi Electric Semiconductor

ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
*
V
V
V
I
I
I
T
T
V
I
V
t
Q
R
R
1
DC
FSM
2 t
RRM
rr
j
stg
RRM
DRM
R (DC)
iso
FM
th (j-c)
th (c-f)
rr
Symbol
Symbol
Symbol
12 class: V
—
—
R
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Reverse DC voltage
DC output current
Surge (non-repetitive) forward current
I
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Repetitive reverse current
Forward voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
2 t
=300V
for fusing
20, 24 class: V
Parameter
Parameter
Parameter
R
=600V
Resistive load, T
One half cycle at 60Hz, peak value
Value for one cycle of surge current
Charged part to case
Main terminal screw M4
Mounting screw M5
Typical value
T
T
I
Junction to case
Case to fin, conductive grease applied
(T
FM
j
j
=150 C, V
=25 C, I
j
=25 C)
=50A, di/dt=–100A/ s, V
FM
RRM
=50A, instantaneous meas.
600
720
480
12
C
applied
=105 C
Test conditions
Conditions
R
=300/600V*
MITSUBISHI FAST RECOVERY DIODE MODULES
Voltage class
1
, Tj=150 C
1000
1100
800
20
HIGH SPEED SWITCHING USE
Min.
—
—
—
—
—
—
0.98~1.47
1.47~1.96
–40~150
–40~125
4.2x10
1200
1350
Ratings
RM50HA-XXF
960
10~15
15~20
Limits
24
1000
2500
Typ.
50
90
—
—
—
—
—
—
3
INSULATED TYPE
Max.
0.15
1.5
0.8
0.6
10
30
kg·cm
kg·cm
Feb.1999
Unit
Unit
N·m
N·m
Unit
A
mA
C/ W
C/ W
V
V
V
A
A
V
g
V
2
C
C
C
s
s