SGA-8343X Stanford Microdevices, SGA-8343X Datasheet - Page 9

• Manufacturer Part Number: SGA-8343X
• Description: Reliability Qualification Report
• Manufacturer: Stanford Microdevices

Table 3: Median Time to Failure and Activation Energy for SGA-8343X.
XII. Median Time to Failure Extrapolation from Accelerated Life Test Data
The following data demonstrates the results from accelerated life tests performed on the
Sirenza 4A SiGe HBT Process. The test was performed on 77 units running at a peak
junction temperature of 195
failures. The FIT rate / MTTF calculation can be found below. The FIT rates were
generated assuming 1 failure. In reality, there were no failures, making this a very
conservative calculation.
Parameters
**Sirenza Microdevices does not assume any liability arising from the use of this data.
Junction Temp C FIT Rate
*The Ea of 0.7eV is conservative, 0.85eV is the activation energy for electromigration which is assumed to be the primary failure mechanism for
*Ea = 0.7 eV
the SiGe process.
125
55
SGA-8343X Reliability Qualification Report
Sirenza Microdevices Process 4A SiGe HBT
0.053
4.136
FIT Rate / MTTF Calculation
°
C. The test exceeded 10,000 hours (1.14 years) with no
SGA Series Devices
MTTF (hrs)
1.89E+10
2.42E+08