DCR1006SF Dynex Semiconductor, DCR1006SF Datasheet - Page 4

• Manufacturer Part Number: DCR1006SF
• Description: Phase Control Thyristor
• Manufacturer: Dynex Semiconductor

DCR1006SF
DYNAMIC CHARACTERISTICS
GATE TRIGGER CHARACTERISTICS AND RATINGS
4/8
Symbol
Symbol
I
RRM
dV/dt
V
P
dI/dt
V
V
V
I
P
V
V
I
FGM
T(TO)
t
G(AV)
RGM
r
t
I
I
FGM
GT
FGN
gd
/I
GM
T
q
L
H
GT
GD
DRM
Peak reverse and off-state current
Maximum linear rate of rise of off-state voltage
Rate of rise of on-state current
Threshold voltage
On-state slope resistance
Delay time
Turn-off time
Latching current
Holding current
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Parameter
Parameter
At V
To 67% V
From 67% V
Gate source 1.5A
t
At T
At T
V
Rise time 0.5 s, T
I
V
V
T
T
V
V
At 67% V
Anode positive with respect to cathode
Anode negative with respect to cathode
Anode positive with respect to cathode
See table, gate characteristics curve
r
T
= 0.5 s. T
D
RM
DR
j
j
DRM
DRM
= 800A, t
= 25
= 25
= 67% V
vj
vj
= 50% V
RRM
= 50V, dI
= 5V, T
= 5V, T
= 125
= 125
o
o
/V
C, V
C, R
DRM
DRM
DRM
j
p
= 125
o
o
DRM
D
g-k
C
C
, T
DRM
case
T
= 1ms, T
DRM
case
T
RR
= 5V
j
case
= 125
=
, Gate source 30V, 15
case
/dt = 20A/ s,
, dV
= 25
to 1000A
= 25
Conditions
o
Conditions
C.
= 125
j
= 125
= 25
o
DR
o
C.
o
C
j
C
/dt = 20V/ s linear
= 125˚C,
o
o
C
o
C
C
Repetitive 50Hz
Non-repetitive
www.dynexsemi.com
Typ.
450
-
-
-
-
-
-
-
-
-
1000
Max.
1000
Max.
0.92
0.25
0.25
250
500
500
100
200
150
0.4
1.8
3.5
30
30
10
5
-
Units
Units
V/ s
A/ s
A/ s
mA
m
mA
mA
mA
W
W
V
V
V
V
A
V
V
s
s