DCR1006SF Dynex Semiconductor, DCR1006SF Datasheet - Page 6

• Manufacturer Part Number: DCR1006SF
• Description: Phase Control Thyristor
• Manufacturer: Dynex Semiconductor

DCR1006SF
6/8
0.001
10000
0.01
1000
Fig.6 Transient thermal impedance - junction to case
0.1
100
0.001
0.1
3 phase 120˚
6 phase 60˚
Conduction
Halfwave
dI/dt
d.c.
Rate of decay of on-state current dI/dt - (A/µs)
I
T
0.01
Double side
Effective thermal resistance
Fig.4 Stored charge
0.022
0.024
0.026
0.027
I
RR
Junction to case ˚C/W
Q
S
1.0
Time - (s)
Anode side
0.038
0.040
0.042
0.043
0.1
Conditions;
Q
T l = 125˚C
S
is total integral charge
10
Double side cooled
Anode side cooled
1.0
I
I
Max. value
T
T
I
I
Min. value
T
T
= 2000A
= 1000A
= 2000A
= 1000A
10
100
Fig.7 Surge (non-repetitive) on-state current vs time (with
50
20
10
40
30
V
100
0.1
0
10
GD
0.001
1
1
Pulse width
10ms
1ms
100
200
500
I
µs
2
t
ms
150
150
150
150
50
20
50% V
Fig.5 Gate characteristics
Frequency Hz
0.01
100
150
150
150
10
Gate trigger current, I
50
-
RRM
400
150
125
100
25
-
1
Duration
at T
Table gives pulse power P
2 3 45
Cycles at 50Hz
0.1
case
www.dynexsemi.com
= 125˚C)
GT
10
- (A)
Region of certain
I
2
1
t = Î
20 30
triggering
GM
2
2
x t
in Watts
50
1.5
1.25
1.0
0.75
0.5
10