MBM200GS12AW Hitachi, MBM200GS12AW Datasheet - Page 3

• Manufacturer Part Number: MBM200GS12AW
• Description: IGBT POWER MODULE
• Manufacturer: Hitachi

1000
100
1.5
0.5
0.1
10
40
30
20
10
1
0
1
0
0
0
0
Vcc=600V
V
R
T
Resistive Load
Vcc=600V
V
R
T
Inductive Load
V
R
T
GE
C
G
GE
C
G
=25°C
C
GE
G
=6.2W
=125°C
=6.2W
£125°C
=±15V
=6.2W
200
=±15V
=±15V
Reverse biased safe operating area
Switching time vs. Collector current
Collector to Emitter Voltage, V
Switching loss vs. Collector current
50
50
400
Collector Current, I
Collector Current, I
100
100
600
800
150
150
tr
1000
C
(A)
C
(A)
CE
200
200
1200
(V)
TYPICAL
TYPICAL
ton
Err
tf
toff
Etoff
Eton
1400
250
250
0.001
0.01
100
0.1
10
0.1
10
1
1
0.001
1
1
1
V
V
I
T
Inductive Load
V
V
I
T
Resistive Load
C
C
C
CC
GE
CC
GE
C
=200A
=200A
=125°C
=25°C
=600V
=±15V
=600V
=±15V
Switching loss vs. Gate resistance
Switching time vs. Gate resistance
Transient thermal impedance
0.01
Gate Resistance, R
Gate Resistance, R
ton
toff
Time, t (s)
0.1
10
10
Eton
Etoff
G
G
(W)
tf
(W)
tr
1
PDE-M200GS12AW-0
TYPICAL
TYPICAL
Diode
IGBT
100
10
100