MBM200GS6AW Hitachi, MBM200GS6AW Datasheet - Page 2

• Manufacturer Part Number: MBM200GS6AW
• Description: IGBT POWER MODULE
• Manufacturer: Hitachi

400
300
200
100
10
20
15
10
0
Collector to Emitter voltage vs. Gate to Emitter voltage
8
6
4
2
0
Collector current vs. Collector to Emitter voltage
5
0
0
0
0
Tc=25°C
Vcc=300V
Ic =200A
Tc=25°C
Tc=25°C
VGE=15V
Collector to Emitter Voltage, V
2
200
Gate to Emitter Voltage, V
Gate charge characteristics
14V
5
Gate Charge, Q
13V12V
400
4
Pc=600W
10
600
6
G
(nc)
15
CE
GE
Ic =400A
Ic =200A
800
8
TYPICAL
(V)
TYPICAL
TYPICAL
(V)
1000
10
20
10V
11V
9V
400
300
200
100
400
300
200
100
10
Collector to Emitter voltage vs. Gate to Emitter voltage
8
6
4
2
0
0
Collector current vs. Collector to Emitter voltage
0
0
0
0
Tc=125°C
Tc=125°C
V
Tc=25°C
Tc=125°C
GE
=0
Forward voltage of free-wheeling diode
Collector to Emitter Voltage, V
V
GE
2
1
Gate to Emitter Voltage, V
=15V14V13V12V
5
Forward Voltage, V
4
2
10
6
3
F
15
(V)
GE
CE
Ic =400A
Ic =200A
8
4
(V)
TYPICAL
TYPICAL
(V)
TYPICAL
PDE-M200GS6AW-0
10
20
5
11V
10V
9V