MX25L6402A Macronix International, MX25L6402A Datasheet - Page 26

• Manufacturer Part Number: MX25L6402A
• Description: 64M-BIT [x 1] CMOS SERIAL eLite FlashTM MEMORY
• Manufacturer: Macronix International

www.DataSheet4U.com
ERASE AND PROGRAMMING PERFORMANCE
Note:
1. Typical program and erase time assumes the following conditions: 25 C, 3.0V, and all bits are programmed by checker-
2. Under worst conditions of 70 C and 3.0V. Maximum values are up to including 100 program/erase cycles.
3. System-level overhead is the time required to execute the command sequences for the page program command.
4. Excludes 00H programming prior to erasure. (In the pre-programming step of the embedded erase algorithm, all bits are
P/N: PM1040
LATCH-UP CHARACTERISTICS
PARAMETER
Chip Erase Time
Chip Erase Time (with ACC=12V)
Sector erase Time
Sector erase Time (with ACC=12V)
Page Programming Time
Page Programming Time (with ACC=12V)
Chip Programming Time
Chip Programming Time (with ACC=12V)
Input Voltage with respect to GND on ACC
Input Voltage with respect to GND on all power pins, SI, CS#
Input Voltage with respect to GND on SO
Current
Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at a time.
board pattern.
programmed to 00H before erasure)
TYP. (1)
160
128
180
240
1.6
1.6
2
2
26
Max. (2)
512
410
360
480
6.4
16
13
8
UNIT
mS
mS
s
s
s
s
s
s
MX25L6402A
Comments
Note (4)
Note (4)
Note (4)
Note (4)
Excludes system level overhead(3)
Excludes system level overhead(3)
-100mA
-1.0V
-1.0V
-1.0V
MIN.
REV. 1.0, SEP. 29, 2004
VCC + 1.0V
2 VCCmax
+100mA
MAX.
12.5V