MX29LV004B Macronix, MX29LV004B Datasheet - Page 23

• Manufacturer Part Number: MX29LV004B
• Description: 4M-Bit CMOS Single Voltage 3V Only Flash Memory
• Manufacturer: Macronix

AC CHARACTERISTICS
Table 11. Erase/Program Operations
NOTES:
1. Not 100% tested.
2. See the "Erase and Programming Performance" section for more information.
3. RY/BY# pin is provided for 40-TSOP.
P/N:PM0732
SYMBOL PARAMETER
tWC
tAS
tAH
tDS
tDH
tOES
tGHWL
tCS
tCH
tWP
tWPH
tWHWH1 Programming Operation (Note 2)
tWHWH2 Sector Erase Operation (Note 2)
tVCS
tRB(Note3)Recovery Time from RY/BY#
tBUSY
(Note 3)
tWPP1
tWPP2
tBAL
Write Cycle Time (Note 1)
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Output Enable Setup Time
Read Recovery Time Before
Write (OE# High to WE# Low)
CE# Setup Time
CE# Hold Time
Write Pulse Width
Write Pulse Width High
(Byte program time)
VCC Setup Time (Note 1)
Program/Erase Vaild to RY/BY#
Delay
protect (A9, OE# Control)
protect (A9, OE# Control)
Sector Address Load Time
Write pulse width for sector
Write pulse width for sector
TA = -40
(TA = 0
o
C to 70
o
C to 85
29LV004T/B-55R
MIN.
55
0
45
35
0
0
0
0
0
35
30
9(Typ.)
0.7(Typ.)
50
0
100ns
100ns
o
C, VCC = 3.3V 5% for MX29LV004T/B-55R)
o
C, VCC = 2.7V~3.6V
23
MAX.
90
(Typ.)
(Typ.)
50
10us
12ms
MIN.
70
0
45
35
0
0
0
0
35
30
0.7(Typ.)
50
0
100ns
0
9(Typ.)
100ns
29LV004T/B-70
MX29LV004T/B
MAX.
90
10us
(Typ.)
12ms
(Typ.)
50
MIN.
90
0
45
45
0
0
0
0
0
35
30
9(Typ.)
0.7(Typ.)
50
0
100ns
100ns
29LV004T/B-90
REV. 1.7, DEC. 20, 2004
MAX.
90
10us
(Typ.)
12ms
(Typ.)
50
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
sec
us
ns
ns
us