ssrf4n60 SeCoS Halbleitertechnologie GmbH, ssrf4n60 Datasheet

ssrf4n60

Manufacturer Part Number

ssrf4n60

Description

Elektronische Bauelemente 4a , 600 V , Rds On 2.4 N-channel Enhancement Mode Power Mosfet

Manufacturer

SeCoS Halbleitertechnologie GmbH

Datasheet

1.SSRF4N60.pdf (4 pages)

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http://www.SeCoSGmbH.com/

5-Jul-2011 Rev. A

DESCRIPTION

FEATURES

ABSOLUTE MAXIMUM RATINGS(

scheme to provide enhanced voltage-blocking capability without

degrading performance over time. This advanced technology has

been especially tailored to minimize on-state resistance, provide

superior switching performance. This device is well suited for high

efficiency switched mode power suppliers, active power factor

correction, electronic lamp ballasts based half bridge topology.

Notes:

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Power Dissipation

Derating factor above 25° C

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Operating Junction and Storage Temperature Range

Maximum Junction to Ambient

Maximum Junction to Case

Robust high voltage termination

Avalanche energy specified

Diode is characterized for use in bridge circuits

Source to Drain diode recovery time comparable to a

discrete fast recovery diode.

1. L=30mH, I

2. Repetitive Rating: Pulse width limited by maximum junction temperature

The N-Channel MOSFET is used an advanced termination

Elektronische Bauelemente

=4.4A, V

Parameter

=85V, R

=25 , Starting T

A suffix of “-C” specifies halogen and lead-free

=25° C unless otherwise specified

RoHS Compliant Product

Thermal Resistance Rating

=25° C

Gate

N-Channel Enhancement Mode Power MOSFET

Symbol

, T

θJA

θJC

Source

Drain

stg

4A , 600 V , R

)

SSRF4N60

REF.

Any changes of specification will not be informed individually.

150,-55~150

Ratings

14.60

12.60

Min.

9.50

4.30

2.30

0.30

Millimeter

0.26

62.5

3.79

600

±30

330

4.0

7.3

DS(ON)

15.70

10.50

14.00

Max.

4.70

2.80

0.70

3.2

ITO-220

2.4 Ω Ω Ω Ω

REF.

φ 3.0

Min.

2.70

0.90

0.50

2.34

2.40

Millimeter

Page 1 of 4

W / ° C

° C / W

Unit

°C

Max.

φ 3.4

3.80

1.50

0.90

2.74

3.00

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ssrf4n60 Summary of contents

Page 1

... A suffix of “-C” specifies halogen and lead-free 1 Gate T =25° C unless otherwise specified C Symbol Thermal Resistance Rating R R =25 , Starting T =25° SSRF4N60 2.4 Ω Ω Ω Ω 600 DS(ON) ITO-220 Drain Millimeter REF. Min. Max. A 14.60 15.70 B 9.50 10. ...

Page 2

... C oss - 4 rss 4 1 300 - 2 SSRF4N60 2.4 Ω Ω Ω Ω 600 DS(ON) Unit Test Conditions =250µ =10V =0, I =250µ µA V =600V =30V ...

Page 3

... Elektronische Bauelemente CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 5-Jul-2011 Rev. A SSRF4N60 4A , 600 DS(ON) N-Channel Enhancement Mode Power MOSFET Any changes of specification will not be informed individually. 2.4 Ω Ω Ω Ω Page ...

Page 4

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