ssrf4n60 SeCoS Halbleitertechnologie GmbH, ssrf4n60 Datasheet - Page 2

• Manufacturer Part Number: ssrf4n60
• Description: Elektronische Bauelemente 4a , 600 V , Rds On 2.4 N-channel Enhancement Mode Power Mosfet
• Manufacturer: SeCoS Halbleitertechnologie GmbH

http://www.SeCoSGmbH.com/
5-Jul-2011 Rev. A
ELECTRICAL CHARACTERISTICS
Notes:
Gate-Threshold Voltage
Drain-Source On-Resistance
Drain-Sounce Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulsed Drain-Source Diode
Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
1. Pulse Test: Pulse width < 300us, Duty cycle ≤ 2%.
2. Basically not affected by working temperature.
1.2
1.2
Elektronische Bauelemente
Parameter
1.2
1.2
1.2
1.2
1.2
1
Symbol
R
(T
BV
V
I
T
T
I
DS(ON)
I
C
GSSF
GSSR
Q
C
C
V
Q
GS(th)
I
Q
Q
DSS
T
d(on)
d(off)
T
T
I
SM
A
oss
SD
iss
rss
S
DSS
gd
gs
rr
rr
=25°C unless otherwise specified)
g
r
f
Min.
600
2.0
Dynamic
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Static
Typ.
19.8
N-Channel Enhancement Mode Power MOSFET
160
672
300
4.7
2.0
7.2
2.2
66
27
19
22
4
-
-
-
-
-
-
-
-
Max.
-100
100
4.0
2.4
4.0
1.4
10
16
-
-
-
-
-
-
-
-
-
-
-
-
-
4A , 600 V , R
Unit
µA
nA
nC
nS
nS
µC
nA
pF
SSRF4N60
V
V
A
A
V
Any changes of specification will not be informed individually.
V
V
V
V
V
V
V
V
V
V
V
V
I
F
DS
GS
GS
DS
GS
GS
DS
GS
DD
DS
GS
GS
/ dt =100A/µs
=V
=600V, V
=480V, I
=25V, V
=10V, I
=0, I
=30V, V
= -30V, V
=10V
=300V, I
=0, I
=0, I
DS(ON)
GS
Test Conditions
D
S
S
, I
=4.0A
=4.0A,
=250µA
D
D
=250µA
DS
2.4 Ω Ω Ω Ω
GS
=2A
D
D
GS
DS
=4.4A,
=0
=4.4A, R
=0, f =1.0MHz
=0
=0
G
=25
Page 2 of 4