rsr015p03 ROHM Co. Ltd., rsr015p03 Datasheet

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rsr015p03

Manufacturer Part Number
rsr015p03
Description
4v Drive Pch Mos Fet
Manufacturer
ROHM Co. Ltd.
Datasheet

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Transistors
4V Drive Pch MOSFET
RSR015P03
Silicon P-channel MOSFET
1) Low On-resistance
2) Space saving−small surface mount package (TSMT3)
3) 4V drive
Switching
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
∗ Mounted on a ceramic board
Channel to ambient
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of storage temperature
Source current
(Body diode)
Type
RSR015P03
Structure
Features
Packaging specifications
Thermal resistance
Applications
Absolute maximum ratings (Ta=25°C)
Package
Code
Basic ordering unit (pieces)
Parameter
Parameter
Continuous
Pulsed
Continuous
Pulsed
Taping
3000
TL
Rth(ch-a)
Symbol
Symbol
V
V
Tstg
Tch
I
I
P
DSS
GSS
I
DP
I
SP
D
S
D
∗1
∗1
∗2
−55 to +150
Limits
Limits
±1.5
−0.5
−30
±20
150
125
±6
−6
1
(1) Gate
(2) Source
(3) Drain
Dimensions (Unit : mm)
Inner circuit
TSMT3
°C/W
Unit
Unit
°C
°C
W
V
V
A
A
A
A
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Abbreviated symbol : SM
0.95
(1)
( 3 )
( 1 )
2.9
0.4
1.9
0.95
( 2 )
∗1
Each lead has same dimensions
RSR015P03
Rev.A
1.0MAX
0.16
(3)
(2)
0.85
0.7
∗2
(1) Gate
(2) Source
(3) Drain
1/4

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rsr015p03 Summary of contents

Page 1

... I DP −0 ∗1 − ∗ 150 Tch −55 to +150 Tstg Symbol Limits ∗ Rth(ch-a) 125 RSR015P03 1.0MAX 2.9 0.85 0.7 0 0.95 0.95 0.16 1.9 Each lead has same dimensions Abbreviated symbol : SM (3) (1) ∗2 ∗1 (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Unit V ...

Page 2

... −1.5A ∗ − − ∗ − − R =10Ω 0 Min. Typ. Max. Unit − − −1.2 = −0.5A RSR015P03 Conditions =0V DS = −1mA D = −10V GS = −4. − −0.8A D − − =10Ω G Conditions =0V GS Rev.A 2/4 ...

Page 3

... Gate-Source Voltage 10000 V GS Pulsed Ta=125°C 1000 75°C 25°C −25°C 100 10 10 00.1 0.1 1 DRAIN CURRENT : −I (A) D Fig.8 Static Drain-Source On-State Resistance vs. Drain current ( ΙΙ ) RSR015P03 10 Ta=25°C = −15V = −15V −10V = −1. =10Ω =10Ω G Pulsed ...

Page 4

... Transistors 10000 Ta=25°C Pulsed = −4.0V V 1000 GS −4.5V −10V 100 10 0.01 0.1 1 DRAIN CURRENT : −I (A) D Fig.10 Static Drain-Source On-State Resistance vs. Drain current ( Ι RSR015P03 Rev.A 4/4 ...

Page 5

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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