cy2048waf Cypress Semiconductor Corporation., cy2048waf Datasheet - Page 3

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cy2048waf

Manufacturer Part Number
cy2048waf
Description
Flash Programmable Capacitor Tuning Array Die For Crystal Oscillator Xo
Manufacturer
Cypress Semiconductor Corporation.
Datasheet
Document #: 38-07738 Rev. *A
Absolute Maximum Conditions
(Above which the useful life may be impaired.
For user guidelines, not tested.)
Supply Voltage (V
DC Input Voltage...................................... –0.5V to V
Crystal Specifications
Operating Conditions
DC Electrical Specifications
Note:
F
R
R
C
C
V
T
C
C
C
C
t
T
V
V
V
V
I
I
I
I
I
I
R
R
C
R
1. Not 100% tested.
Parameter
RAMP
IL
IH
OZL
OZH
DD
PD
NOM
J
S
DD
Parameter
IL
IH
OL
OH
1
3
0
1
XIN
XOUT
L
OUT
UP
DN
IN
F
/R
1
Parameter
Nominal crystal frequency
Equivalent series resistance (ESR)
Ratio of third overtone mode ESR to
fundamental mode ESR
Crystal shunt capacitance
Crystal motional capacitance
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Input Low Current
Input High Current
Output Leakage Current
Output Leakage Current
Power Supply Current
Power Down Current
Input Pull-up resistor
Output Pull-down resistor
Input Pin Capacitance
Crystal Feedback R
DD
) ........................................–0.5 to +7.0V
Description
Description
[1]
Operating Voltage
Junction Temperature
Capacitance XIN, all tuning caps OFF
Capacitance XOUT, all tuning caps OFF
All tuning Caps OFF
All tuning Caps ON
Output Load Capacitance
Power-up time for V
voltage (power ramps must be monotonic)
Start up time, 90% V
TJ = –40 to 125°C over the operating range
CMOS Levels
CMOS Levels
V
V
Input = V
Input = V
Output = V
Output = V
No Load, V
PD# = 0V
V
V
V
PD#/OE pin
XIN = 0
DD
DD
IN
IN
IN
> = 0.8V
= 0.5V
= V
= 2.7V–3.6V, I
= 2.7V–3.6V, I
DD
DD
SS
DD
Description
SS
DD
+ 0.5
Fundamental mode, AT cut
Fundamental mode
Ratio used because typical R
much less than the maximum spec
to reach minimum specified
DD
to valid frequency on output
SS
DD
DD
DD
Condition
= 3.3V, 48 MHz
OL
OL
Output Short Circuit Current ..................................... ± 50 mA
Storage Temperature (Non-condensing) .... –55°C to +125°C
Junction Temperature ................................ –40°C to +125°C
Data Retention @ Tj = 125°C................................> 10 years
ESD (Human Body Model) MIL-STD-883................. > 2000V
= 8 mA
= –8 mA
Comments
V
1
DD
Min.
500
300
values are
80
80
1
–0.4
Min.
0.05
–40
2.7
9.2
4
Typ.
120
900
Min. Typ. Max.
1
1
1
3
4.5
10
2
Typ.
10
10
10
5
CY2048WAF
Max.
1500
150
800
0.4
20
25
10
10
10
50
20
6
7
Max.
11.4
125
500
3.6
15
10
6
Page 3 of 7
48
40
5
%VDD
%VDD
Unit
mA
MΩ
µA
µA
µA
µA
µA
kΩ
kΩ
kΩ
pF
Unit
MHz
V
V
Unit
ms
ms
°C
pF
pF
pF
pF
pF
pF
V
fF
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