hsc106d ETC-unknow, hsc106d Datasheet

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hsc106d

Manufacturer Part Number
hsc106d
Description
Sensitive Gate Silicon Controlled Rectifier
Manufacturer
ETC-unknow
Datasheet
HSC106D
Sensitive Gate Silicon Controlled Rectifier
FEATURES
General Description
Glassivated PNPN devices designed for high volume consumer
applications such as temperature, light and speed control ; process
and remote control, and warning systems where reliability of
operation is important.
Absolute Maximum Ratings
Symbol
I
P
V
V
V
I
T(RMS)
T
I
I
P
T(AV)
G(AV)
TSM
FGM
I
DRM
GRM
T
RRM
STG
GM
Repetitive Peak Off-State Voltage (V
R.M.S On-state Current (I
Average On-state Current (I
Sensitive Gate Triggering (0.2mA
2
t
j
Repetitive Peak Off-State Voltage (Forward)
Repetitive Peak Off-State Voltage (Reverse)
On-State R.M.S Current
(180˚ Condition Angles, T
On-State Average Current
(180˚ Condition Angles, T
Surge On-State Current (1/2 Cycle, 60Hz, Sine
Wave, Non-repetitive, Tj = 110 °C)
Circuit Fusing Considerations (t=8.3mS)
Forward Peak Gate Power Dissipation
(Pulse Width ≤1.0μsec,Tc=80℃)
Forward Average Gate Power Dissipation
(Pulse Width ≤1.0μsec, Tc=80℃)
Reverse Peak Gate Voltage
Forward Peak Gate Current
(Pulse Width ≤1.0 μsec, Tc=80℃)
Storage Temperature Range
Operating Junction Temperature
T(RMS)
Parameter
T(AV)
=4.0A)
=2.55A)
C
C
=80℃)
Max
=80℃)
@25℃)
RM
= 400V)
(
T
J
=25℃)
-40 to +150
-40 to +110
Value
2.55
1.65
400
400
4.0
0.5
0.1
6.0
0.2
20
V
I
Symbol
1
T(RMS)
1.Cathode
DRM
2
3
= 400 V
◎ SEMIHOW REV.1.1 May 2007
= 4.0A
Units
A
W
W
V
V
A
A
A
V
A
2
HSC106D
2.Anode
s
3.Gate

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hsc106d Summary of contents

Page 1

... Storage Temperature Range STG T Operating Junction Temperature j = 400V) RM =4.0A) =2.55A) @25℃) Max T =25℃ =80℃) C =80℃ 400 V DRM I = 4.0A T(RMS) 2.Anode Symbol 3.Gate 1.Cathode 1 HSC106D 2 3 Value Units 400 V 400 V 4 0.5 W 0.1 W 6.0 V 0.2 A ℃ -40 to +150 ℃ ...

Page 2

Electrical Characteristics Symbol Parameter (1) I Gate Trigger Current GT (1) V Gate Trigger Voltage GT V Non Trigger Gate Voltage GD I Holding Current H I Latching Current L I Repetitive or Reverse DRM I Peak Blocking Current RRM ...

Page 3

Performance Curves Fig 1. Average Current Derating 110 100 Half Sine Wave 40 Resistive or Inductive Load 50 to 400Hz 1.2 1.6 2.0 2.4 I Average On-State Current (A) ...

Page 4

... Package Dimension b a Dimension Symbol Min 1.27 Typ D 3 HSC106D (TO-126 Dimension Table Symbol Max 8.5 L1 12.0 φ 2 4 Unit :[ mm] Dimension Min Max 2.3 2.7 3.0 3.4 0.7 0.86 1.2 Typ 2.3 ◎ SEMIHOW REV.1.1 May 2007 ...

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