hsc106d ETC-unknow, hsc106d Datasheet - Page 2

• Manufacturer Part Number: hsc106d
• Description: Sensitive Gate Silicon Controlled Rectifier
• Manufacturer: ETC-unknow

Thermal Characteristics
(1)
(2)
Symbol
Symbol
R
R
Electrical Characteristics
dv/dt
R
Pulse Test : Pulse width ≤ 2.0mS, Duty Cycle ≤ 2%
I
I
TH(J-C)
TH(J-A)
V
V
V
TL
I
DRM
RRM
I
I
GK
GT
GD
TM
GT
H
L
Current is not included in measurement
Gate Trigger Current
Gate Trigger Voltage
Non Trigger Gate Voltage
Holding Current
Latching Current
Repetitive or Reverse
Peak Blocking Current
Peak Forward On-State
Voltage
Critical Rate of Rise
Off state Voltage
Thermal Resistance
Thermal Resistance
Maximum Lead Temperature for Soldering Purpose 1/8 ” , from case
for 10second
Parameter
Parameter
(2)
(1)
(1)
(
T
a
=25℃)
Junction to Case
Junction to Ambient
V
V
V
V
V
V
Initiating current=20mA, T
V
Gate Open,
V
I
V
R
FM
GK
AK
AK
AK
AK
AK
AK
AK
AK
AK
=1A
= 1㏀, Gate open,
= 6VDC, R
= 6VDC, R
= 6VDC, R
= 6VDC, R
= 12VDC, R
= 12VDC, Gate open,
= 12VDC, I
= V
= V
DRM
DRM
Test Conditions
or V
, Exponential waveform,
Conditions
L
L
L
L
G
= 100Ω, T
= 100Ω, T
= 100Ω, T
= 100Ω, T
RRM
L
= 20mA,
= 100Ω, T
,
T
T
T
T
T
T
T
C
J
J
J
J
C
J
J
J
J
J
J
C
= -40℃
= 110℃
= 25℃
= 25℃
=110℃
= 25℃
= 110℃
= 25℃
= -40℃
= 25℃
= -40℃
= 110℃
= 110℃
Min
Min
0.4
0.5
0.2
Typ
0.75
0.19
0.33
0.07
0.35
Typ
0.6
0.2
8.0
15
35
◎ SEMIHOW REV.1.1 May 2007
Max
Max
260
200
500
100
0.8
1.0
3.0
6.0
2.0
5.0
2.2
3.0
10
75
℃/W
℃/W
Units
Units
V/uS
mA
mA
uA
uA
uA
℃
V
V
V