r6018anx ROHM Co. Ltd., r6018anx Datasheet

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r6018anx

Manufacturer Part Number
r6018anx
Description
Structure Silicon N-channel Mosfet Features 1 Low On-resistance. 2 Fast Switching Speed. 3 Gate-source Voltage Vgss Guaranteed To Be 30v. 4 Drive Circuits Can Be Simple. 5 Parallel Use Is Easy. Applications Switching
Manufacturer
ROHM Co. Ltd.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
R6018ANX
Manufacturer:
ROHM
Quantity:
8 000
Part Number:
r6018anx STF23NM60N
Manufacturer:
ST
0
10V Drive Nch MOSFET
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (V
4) Drive circuits can be simple.
5) Parallel use is easy.
Applications
Switching
Packaging specifications
Absolute maximum ratings (Ta=25C)
Thermal resistance
∗1 Pw≤10μs, Duty cycle≤1%
∗2 L 500μH, V
∗3 Limited only by maximum temperature allowed.
Channel to case
c
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Avalanche current
Avalanche energy
Power dissipation (Tc=25°C)
Channel temperature
Range of storage temperature
www.rohm.com
Type
R6018ANX
R6018ANX
2011 ROHM Co., Ltd. All rights reserved.
Package
Basic ordering unit (pieces)
DD
Parameter
=50V, R
Parameter
G
=25Ω, Starting, Tch=25°C
Continuous
Pulsed
Continuous
Pulsed
GSS
) guaranteed to be 30V.
Symbol
V
V
Tstg
Tch
E
I
I
I
P
DSS
GSS
I
I
DP
SP
AS
AS
D
S
D
Rth(ch-c)
Bulk
500
Symbol
∗3
∗1
∗3
∗1
∗2
∗2
−55 to +150
Limits
21.6
600
±30
±18
±72
150
18
72
50
9
Limits
2.5
Unit
mJ
1/5
°C
°C
W
V
V
A
A
A
A
A
°C/W
Unit
Dimensions (Unit : mm)
Inner circuit
∗1 Body Diode
(1) Gate
(2) Drain
(3) Source
TO-220FM
(1)
(2)
2.54
1.3
(1)
10. 0
∗1
(2) (3)
1.2
2.54
0.8
(3)
(1) Gate
(2) Drain
(3) Source
φ 3.2
0.75
4.5
2011.06 - Rev.A
2.8
2.6

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r6018anx Summary of contents

Page 1

... Fast switching speed. ) guaranteed to be 30V. 3) Gate-source voltage (V GSS 4) Drive circuits can be simple. 5) Parallel use is easy. Applications Switching Packaging specifications Package Type Basic ordering unit (pieces) R6018ANX Absolute maximum ratings (Ta=25C) Parameter Symbol Drain-source voltage V DSS Gate-source voltage V GSS Continuous I Drain current ...

Page 2

... R6018ANX Electrical characteristics (Ta=25C) Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR)DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS(th) Static drain-source on-state resistance R DS(on) Forward transfer admittance | Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss Turn-on delay time ...

Page 3

... R6018ANX Electrical characteristic curves 100 Operation in this area is limited by R DS(ON =100us W P =1ms W 0 10ms 25°C DC operation Single Pulse 0.01 0 100 DRAIN-SOURCE VOLTAGE : V DS Fig.1 Maximum Safe Operating Aera 100 V = 10V DS Pulsed 10 Ta= 125°C Ta= 75°C 1 Ta= 25°C Ta= -25° ...

Page 4

... R6018ANX 100 Pulsed 10 Ta= 125°C Ta= 75°C 1 Ta= 25°C Ta= -25°C 0.1 0.01 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : V (V) SD Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 1000 100 Ta= 25° dt= 100A /  Pulsed 10 0 100 REVERSE DRAIN CURRENT : I (A) DR Fig.13 Reverse Recovery Time vs ...

Page 5

... R6018ANX Measurement circuit D.U. Fig.1-1 Switching time measurement circuit D.U.T. I G(Const Fig.2-1 Gate charge measurement circuit D.U. Fig.3-1 Avalanche Measurement circuit www.rohm.com ○ 2011 ROHM Co., Ltd. All rights reserved. ...

Page 6

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...

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