mmft2n25e Freescale Semiconductor, Inc, mmft2n25e Datasheet - Page 3

• Manufacturer Part Number: mmft2n25e
• Description: Tmos E-fettm High Energy Power Fet
• Manufacturer: Freescale Semiconductor, Inc

Motorola TMOS Power MOSFET Transistor Device Data
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
7.0
6.0
5.0
4.0
3.0
2.0
1.0
2.5
2.0
1.5
1.0
0.5
0
0
0
–50
0
0
Figure 3. On–Resistance versus Drain Current
V GS = 10 V
I D = 1.0 A
V GS = 10 V
T J = 25°C
Figure 5. On–Resistance Variation versus
–25
Figure 1. On–Region Characteristics
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
5.0
1.0
T J , JUNCTION TEMPERATURE (°C)
0
I D , DRAIN CURRENT (AMPS)
and Temperature
25
Temperature
9.0 V
T J = 100°C
2.0
10
50
75
V GS = 10 V
100
3.0
15
25°C
– 55°C
125
8.0 V
7.0 V
6.0 V
5.0 V
150
4.0
20
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
6.0
5.0
4.0
3.0
2.0
1.0
1.0
10
0
0
3.0
0
0
Figure 4. On–Resistance versus Drain Current
V GS = 0 V
V DS ≥ 10 V
Figure 6. Drain–to–Source Leakage Current
T J = 25°C
3.5
0.5
Figure 2. Transfer Characteristics
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
V GS , GATE–TO–SOURCE VOLTAGE (VOLTS)
50
4.0
1.0
I D , DRAIN CURRENT (AMPS)
4.5
and Gate Voltage
versus Voltage
1.5
100
5.0
2.0
T J = 125°C
5.5
100°C
V GS = 10 V
150
2.5
6.0
– 55°C
MMFT2N25E
3.0
T J = 100°C
6.5
200
15 V
3.5
7.0
25°C
4.0
250
3
7.5