irhyb67134cm International Rectifier Corp., irhyb67134cm Datasheet - Page 2

• Manufacturer Part Number: irhyb67134cm
• Description: 150v 300krad Hi-rel Single N-channel Tid Hardened Mosfet In A Low-ohmic To-257aa Package
• Manufacturer: International Rectifier Corp.

Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
Source-Drain Diode Ratings and Characteristics
For footnotes refer to the last page
Electrical Characteristics
Thermal Resistance
IRHYB67134CM
R thJC
R thJA
BV DSS
∆BV DSS /∆T J Temperature Coefficient of Breakdown
R DS(on)
V GS(th)
g fs
I DSS
I GSS
I GSS
Q g
Q gs
Q gd
t d
t r
t d
t f
L S + L D
R g
C iss
C oss
C rss
I S
I SM
V SD
t rr
Q RR Reverse Recovery Charge
t on
2
(on)
(off)
Parameter
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Forward Turn-On Time
Parameter
Junction-to-Case
Junction-to-Ambient
Parameter
Drain-to-Source Breakdown Voltage
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + L D .
@ Tj = 25°C (Unless Otherwise Specified)
Min Typ Max Units
—
—
Min Typ Max Units
—
—
—
—
—
Min
150
2.0
12
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
— 300
1540
1.67
Typ Max Units
0.19
240
6.8
5.2
1.1
80
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.2
2.6
19
76
0.09
-100
°C/W
100
4.0
—
—
—
10
25
50
15
18
20
30
35
25
—
—
—
—
—
µC
ns
V
A
V/°C
S ( )
nH
µA
nA
nC
ns
pF
Ω
Ω
V
V
Ω
T j = 25°C, I F = 19A, di/dt ≤ 100A/µs
T
j
Measured from Drain lead (6mm /
(
0.25in
6mm /0.25in. from package)
= 25°C, I S = 19A, V GS = 0V Ã
Reference to 25°C, I D = 1.0mA
Test Conditions
Test Conditions
.
V GS = 0V, T J = 125°C
from package) to Source lead
V GS = 0V, V DS = 25V
V GS = 0V, I D = 1.0mA
V GS = 12V, I D = 12A
V DS = V GS , I D = 1.0mA
V DS = 15V, I DS = 12A Ã
V DS = 120V ,V GS =0V
V GS =12V, I D = 19A
f = 1.0MHz, open drain
V DD = 75V, I D = 19A
V GS =12V, R G = 7.5Ω
Test Conditions
V DD ≤ 25V Ã
V DS = 120V,
V GS = -20V
V GS = 20V
V DS = 75V
f = 1.0MHz
Pre-Irradiation
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