irhyb67134cm International Rectifier Corp., irhyb67134cm Datasheet - Page 5

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irhyb67134cm

Manufacturer Part Number
irhyb67134cm
Description
150v 300krad Hi-rel Single N-channel Tid Hardened Mosfet In A Low-ohmic To-257aa Package
Manufacturer
International Rectifier Corp.
Datasheet
Pre-Irradiation
www.irf.com
2800
2400
2000
1600
1200
800
400
100
0.1
10
0
1
1
0.2
Fig 7. Typical Source-Drain Diode
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
T J = 150°C
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.4
Forward Voltage
C rss
C oss
C iss
0.6
f = 1 MHz
10
0.8
100KHz
1.0
V GS = 0V
1.2
100
1.4
1000
20
16
12
100
0.1
8
4
0
10
1
0
Fig 8. Maximum Safe Operating Area
1
Fig 6. Typical Gate Charge Vs.
I D = 19A
Tc = 25°C
Tj = 150°C
Single Pulse
Gate-to-Source Voltage
10
V DS , Drain-to-Source Voltage (V)
Q G, Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
20
10
V DS = 120V
V DS = 75V
V DS = 30V
FOR TEST CIRCUIT
30
SEE FIGURE 13
IRHYB67134CM
6
40
100
10ms
100µs
1ms
50
1000
5
60

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