mrfe6s9135h Freescale Semiconductor, Inc, mrfe6s9135h Datasheet - Page 2

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mrfe6s9135h

Manufacturer Part Number
mrfe6s9135h
Description
Rf Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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2
MRFE6S9135HR3 MRFE6S9135HSR3
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
Single- Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate- Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain- Source On - Voltage
Reverse Transfer Capacitance
Output Capacitance
Input Capacitance
Power Gain
Drain Efficiency
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
(V
(V
(V
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DD
GS
DS
DS
DS
= 66 Vdc, V
= 28 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc, V
DS
D
D
D
GS
GS
GS
= 400 μAdc)
= 1000 mAdc, Measured in Functional Test)
= 2.8 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
(1)
Characteristic
Test Methodology
(T
C
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
= 28 Vdc, I
DQ
Symbol
V
V
V
ACPR
I
I
I
DS(on)
C
PAR
C
GS(th)
GS(Q)
C
G
GSS
= 1000 mA, P
IRL
DSS
DSS
η
oss
rss
iss
ps
D
0.15
30.5
Min
1.4
2.2
out
6.1
20
= 39 W Avg. W - CDMA, f = 940 MHz,
- 39.5
32.3
Typ
410
343
IV (Minimum)
- 15
2.1
2.9
0.2
1.3
6.4
A (Minimum)
21
II (Minimum)
Class
Freescale Semiconductor
Max
0.35
2.9
3.7
- 38
10
10
23
- 9
1
RF Device Data
(continued)
μAdc
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
dBc
dB
dB
dB
pF
pF
pF
%

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