mrfe6s9135h Freescale Semiconductor, Inc, mrfe6s9135h Datasheet - Page 3
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mrfe6s9135h
Manufacturer Part Number
mrfe6s9135h
Description
Rf Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet
1.MRFE6S9135H.pdf
(12 pages)
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RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
Typical Performances (In Freescale Test Fixture, 50 ohm system) V
Video Bandwidth @ 160 W PEP P
Gain Flatness in 40 MHz Bandwidth @ P
Average Deviation from Linear Phase in 40 MHz Bandwidth
Average Group Delay @ P
Part - to - Part Insertion Phase Variation @ P
Gain Variation over Temperature
Output Power Variation over Temperature
(Tone Spacing from 100 kHz to VBW)
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
@ P
f = 940 MHz, Six Sigma Window
( - 30°C to +85°C)
( - 30°C to +85°C)
out
= 135 W CW
out
Characteristic
= 135 W CW, f = 940 MHz
out
where IM3 = - 30 dBc
(T
out
C
out
= 25°C unless otherwise noted)
= 39 W Avg.
= 135 W CW,
DD
= 28 Vdc, I
(continued)
Symbol
ΔP1dB
Delay
VBW
G
ΔΦ
ΔG
Φ
DQ
F
= 1000 mA, 920 - 960 MHz Bandwidth
Min
—
—
—
—
—
—
—
MRFE6S9135HR3 MRFE6S9135HSR3
0.015
0.01
Typ
0.3
3.6
10
19
1
Max
—
—
—
—
—
—
—
dBm/°C
dB/°C
MHz
Unit
dB
ns
°
°
3