mrfe6s9060n Freescale Semiconductor, Inc, mrfe6s9060n Datasheet - Page 6

• Manufacturer Part Number: mrfe6s9060n
• Description: Rf Power Field Effect Transistor
• Manufacturer: Freescale Semiconductor, Inc

MRFE6S9060NR1
6
21
20
19
18
17
16
1
550 mA
450 mA
350 mA
V
Two−Tone Measurements
Figure 5. Two - Tone Power Gain versus
DD
225 mA
= 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
P
out
, OUTPUT POWER (WATTS) PEP
Output Power
I
DQ
= 675 mA
10
Figure 3. Single - Carrier N - CDMA Broadband Performance
Figure 4. Single - Carrier N - CDMA Broadband Performance
21
20
19
18
17
16
15
14
20
19
18
17
16
15
14
13
820
820
ACPR
ACPR
ALT1
ALT1
η
IRL
G
D
IRL
ps
840
840
η
D
V
I
Pilot, Sync, Paging, Traffic Codes 8
Through 13
DQ
V
I
Pilot, Sync, Paging, Traffic Codes 8
Through 13
DD
TYPICAL CHARACTERISTICS
DQ
860
860
DD
= 450 mA, N−CDMA IS−95
= 28 Vdc, P
@ P
= 450 mA, N−CDMA IS−95
@ P
= 28 Vdc, P
G
100
ps
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
880
out
880
out
= 14 Watts Avg.
= 28 Watts Avg.
out
200
out
= 14 W (Avg.)
900
900
= 28 W (Avg.)
920
920
−10
−20
−30
−40
−50
−60
940
940
1
Figure 6. Third Order Intermodulation Distortion
V
Two−Tone Measurements
I
DQ
DD
350 mA
960
960
= 225 mA
= 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
P
980
980
out
40
30
20
−30
−40
−50
−60
60
50
40
−20
−30
−40
−50
−70
−60
, OUTPUT POWER (WATTS) PEP
versus Output Power
450 mA
675 mA
10
0
−5
−10
−15
−20
0
−5
−10
−15
−20
Freescale Semiconductor
550 mA
RF Device Data
100
200