mrf7s19100n Freescale Semiconductor, Inc, mrf7s19100n Datasheet - Page 10

• Manufacturer Part Number: mrf7s19100n
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

MRF7S19100NR1 MRF7S19100NBR1
10
62
60
58
56
54
52
50
48
46
30
NOTE: Measured in a Peak Tuned Load Pull Fixture
P1dB = 50.39 dBm
(109.50 W)
P3dB = 51.61 dBm (144.90 W)
P3dB
Figure 16. Pulsed CW Output Power
32
Test Impedances per Compression Level
P6dB = 52.12 dBm (162.60 W)
34
versus Input Power
P
4.39 - j5.66
in
, INPUT POWER (dBm)
Z
36
source
Ω
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
38
V
Pulsed CW, 12 μsec(on),
10% Duty Cycle, f = 1960 MHz
DD
= 28 Vdc, I
40
1.81 - j3.27
Z
42
load
Ω
DQ
= 1000 mA
Ideal
Actual
44
46
62
60
58
56
54
52
50
48
46
30
NOTE: Measured in a Peak Tuned Load Pull Fixture
P1dB = 50.94 dBm
(124.20 W)
P3dB = 52.20 dBm (165.90 W)
P3dB
Figure 17. Pulsed CW Output Power
32
Test Impedances per Compression Level
34
P6dB = 52.81 dBm (190.80 W)
versus Input Power
P
4.39 - j5.66
in
, INPUT POWER (dBm)
Z
36
source
Ω
38
V
Pulsed CW, 12 μsec(on),
10% Duty Cycle, f = 1960 MHz
Freescale Semiconductor
DD
= 32 Vdc, I
40
1.81 - j3.27
Z
42
load
RF Device Data
Ω
DQ
= 1000 mA
44
Ideal
Actual
46