mrf7s19100n Freescale Semiconductor, Inc, mrf7s19100n Datasheet - Page 6

• Manufacturer Part Number: mrf7s19100n
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

MRF7S19100NR1 MRF7S19100NBR1
6
20
19
18
17
16
15
1000 mA
500 mA
1250 mA
I
750 mA
DQ
Figure 5. Two - Tone Power Gain versus
1
= 1500 mA
P
out
V
Two −Tone Measurements, 10 MHz Tone Spacing
, OUTPUT POWER (WATTS) PEP
DD
= 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
Output Power
Figure 3. Output Peak - to - Average Ratio Compression (PARC)
Figure 4. Output Peak - to - Average Ratio Compression (PARC)
10
19
18
17
16
15
14
13
12
19
18
17
16
15
14
13
12
11
11
1880
1880
PARC
Broadband Performance @ P
Broadband Performance @ P
PARC
IRL
IRL
η
G
G
1900
1900
D
ps
η
ps
D
TYPICAL CHARACTERISTICS
V
Single −Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF)
V
Single −Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF)
1920
DD
1920
DD
= 28 Vdc, P
= 28 Vdc, P
100
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
1940
1940
200
out
out
1960
1960
= 47 W (Avg.), I
= 29 W (Avg.), I
1980
1980
out
out
−10
−20
−30
−40
−50
−60
DQ
DQ
= 29 Watts Avg.
= 47 Watts Avg.
2000
2000
Figure 6. Third Order Intermodulation Distortion
= 1000 mA
= 1000 mA
I
V
Two −Tone Measurements, 10 MHz Tone Spacing
DQ
DD
750 mA
= 500 mA
1
2020
= 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
2020
P
out
2040
2040
, OUTPUT POWER (WATTS) PEP
versus Output Power
33
32
31
30
29
40
39
38
37
36
−1.4
−1.5
−1.6
−3
−3.1
−3.2
−1.7
−3.3
1250 mA
10
−10
−15
−20
−25
−30
−10
−15
−20
−25
−30
1500 mA
Freescale Semiconductor
1000 mA
RF Device Data
100
200