mrf5s21150h Freescale Semiconductor, Inc, mrf5s21150h Datasheet - Page 5

• Manufacturer Part Number: mrf5s21150h
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
−25
−30
−35
−40
−45
−50
−55
−60
14
13
12
10
11
0.1
1
Figure 6. Intermodulation Distortion Products
700 mA
I
1600 mA
1300 mA
1000 mA
3rd Order
5th Order
7th Order
DQ
Figure 4. Two - Tone Power Gain versus
= 1900 mA
V
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
DD
= 28 Vdc, P
P
out
versus Tone Spacing
, OUTPUT POWER (WATTS) PEP
TWO−TONE SPACING (MHz)
V
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ P
DD
10
1
Output Power
out
= 28 Vdc
= 150 W (PEP), I
13
12
10
11
9
8
7
6
5
2060
ACPR
IM3
2080
G
η
IRL
ps
D
DQ
10
100
= 1300 mA
V
2−Carrier W−CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
2100
DD
TYPICAL CHARACTERISTICS
= 28 Vdc, P
f, FREQUENCY (MHz)
2120
out
1000
2140
100
= 33 W (Avg.), I
2160
−25
−30
−35
−40
−45
−50
−55
−60
−65
DQ
58
56
54
52
50
48
2180
35
= 1300 mA
1
Figure 5. Third Order Intermodulation Distortion
P1dB = 52.73 dBm (187.5 W)
I
DQ
Figure 7. Pulse CW Output Power versus
2200
P3dB = 53.41 dBm (219.28 W)
= 700 mA
1000 mA
37
2220
P
out
out
35
30
25
20
−28
−32
−36
−40
−44
, OUTPUT POWER (WATTS) PEP
V
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
P
MRF5S21150HR3 MRF5S21150HSR3
versus Output Power
= 33 Watts Avg.
DD
39
10
in
, INPUT POWER (dBm)
1300 mA
= 28 Vdc
Input Power
−10
−15
−20
−25
−30
V
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2140 MHz
DD
1900 mA
1600 mA
41
= 28 Vdc, I
Ideal
100
43
DQ
= 1300 mA
45
Actual
1000
47
5