mrf5s21150h Freescale Semiconductor, Inc, mrf5s21150h Datasheet - Page 6

• Manufacturer Part Number: mrf5s21150h
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

6
MRF5S21150HR3 MRF5S21150HSR3
0.0001
0.001
30
25
20
15
10
0.01
100
5
0
0.1
10
1
1
64 DPCH, 67% Clipping, Single - Carrier Test Signal
0
V
f2 = 2145 MHz, 2−Carrier W−CDMA, 10 MHz
Carrier Spacing, 3.84 MHz Channel Bandwidth,
PAR = 8.5 dB @ 0.01% Probability (CCDF)
Figure 10. CCDF W - CDMA 3GPP, Test Model 1,
DD
Figure 8. 2 - Carrier W - CDMA ACPR, IM3,
W−CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
= 28 Vdc, I
P
out
Power Gain and Drain Efficiency
G
, OUTPUT POWER (WATTS) AVG. (W−CDMA)
ps
2
DQ
versus Output Power
PEAK−TO−AVERAGE (dB)
= 1300 mA, f1 = 2135 MHz,
4
10
η
D
6
TYPICAL CHARACTERISTICS
8
W - CDMA TEST SIGNAL
IM3
ACPR
100
10
−25
−30
−35
−40
−45
−50
−55
−100
−110
−120
−40
−60
−80
−20
−30
−50
−70
−90
10
10
10
10
Figure 9. MTTF Factor versus Junction Temperature
9
8
7
6
−25
100
This above graph displays calculated MTTF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
−IM3 in
3.84 MHz BW
−20
Figure 11. 2-Carrier W-CDMA Spectrum
120
−15
T
J
, JUNCTION TEMPERATURE (°C)
D
−10
2
−ACPR in
3.84 MHz BW
for MTTF in a particular application.
f, FREQUENCY (MHz)
140
−5
3.84 MHz
Channel BW
160
0
+ACPR in
3.84 MHz BW
Freescale Semiconductor
5
180
10
RF Device Data
+IM3 in
3.84 MHz BW
15
200
20
2
220
25