fll810iq-3c Eudyna Devices Inc, fll810iq-3c Datasheet
fll810iq-3c
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fll810iq-3c Summary of contents
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... Suitable for class AB operation. • Hermetically Sealed Package DESCRIPTION The FLL810IQ- Watt GaAs FET that employs a push-pull design. This device offers excellent linearity, ease of matching, and greater consistency in covering the frequency band of 2.5 to 2.7 GHz. This new product is uniquely suited for use in MMDS applications as it offers high gain, long term reliability and ease of use. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25° ...
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... FLL810IQ-3C L-Band High Power GaAs FET OUTPUT POWER vs. FREQUENCY 12V 2.4 2.5 2.6 Frequency (GHz) 39dBm 34dBm -30 30dBm -40 26dBm -50 -60 22dBm 2.7 2.8 OUTPUT POWER & η add vs. INPUT POWER 12V Pout η add ...
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... Download S-Parameters, click here 3 FLL810IQ-3C S22 MAG ANG .841 167.3 .805 167.9 .790 169.2 .777 170.2 .795 171.0 .818 169.7 .819 167.1 .781 163.5 .668 162.4 .560 170.4 .556 -175.3 ...
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... FLL810IQ-3C L-Band High Power GaAs FET 6 4-R1.3±0.2 For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ ...