fll810lq-3c Eudyna Devices Inc, fll810lq-3c Datasheet
fll810lq-3c
Manufacturer Part Number
fll810lq-3c
Description
L-band High Power Gaas Fet
Manufacturer
Eudyna Devices Inc
Datasheet
1.FLL810LQ-3C.pdf
(4 pages)
Edition 1.1
October 2001
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 C)
CASE STYLE: IQ
Note 1: The condition for GL is the same as Pout except Pin = 25.0dBm.
FEATURES
• Push-Pull Configuration
• High Power Output: 80W
• High PAE: 50%.
• Excellent Linearity
• Suitable for class AB operation.
• Hermetically Sealed Package
DESCRIPTION
The FLL810IQ-3C is an 80 Watt GaAs FET that employs a push-pull design.
This device offers excellent linearity, ease of matching, and greater consistency
in covering the frequency band of 2.5 to 2.7 GHz. This new product is uniquely
suited for use in MMDS applications as it offers high gain, long term reliability
and ease of use.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25 C)
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
Drain Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Output Power
Linear Gain (Note 1)
Power-Added Efficiency
Drain Current
Thermal Resistance
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
1. The drain-source operating voltage (V DS ) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 176 and -51.8 mA respectively with
3. The operating channel temperature (T ch ) should not exceed 145 C.
gate resistance of 5
Item
Item
Symbol
Symbol
V
V
T
T
P
V
I
I
P
DS
GS
stg
ch
DSR
R
DSS
GL
T
V
GSO
add
out
th
p
V
V
I
V
f = 2.6 GHz
I
Pin = 40.0dBm
Channel to Case
GS
DS
DS
DS
DS
1
= 5.0A
= -2.2mA
= 5V, V
= 5V, I
= 12V
Tc = 25 C
Condition
Conditions
DS
GS
= 220mA
= 0V
L-Band High Power GaAs FET
Min.
48.0
11.0
-0.1
-65 to +175
-5
-
-
-
-
FLL810IQ-3C
Rating
+175
136
15
-5
Limits
Typ.
49.0
12.0
11.5
-0.3
0.8
50
8
-
Max.
15.0
-0.5
1.1
-
-
-
-
-
Unit
W
V
V
dBm
Unit
C
C
C/W
dB
%
A
V
V
A
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fll810lq-3c Summary of contents
Page 1
FEATURES • Push-Pull Configuration • High Power Output: 80W • High PAE: 50%. • Excellent Linearity • Suitable for class AB operation. • Hermetically Sealed Package DESCRIPTION The FLL810IQ- Watt GaAs FET that employs a push-pull design. ...
Page 2
FLL810IQ-3C L-Band High Power GaAs FET OUTPUT POWER vs. FREQUENCY 12V 2.4 2.5 2.6 Frequency (GHz) 39dBm 34dBm -30 30dBm -40 26dBm -50 -60 ...
Page 3
FREQUENCY S11 (MHZ) MAG ANG 1500 .856 137.9 1600 .786 131.5 1700 .698 124.7 1800 .579 118.4 1900 .455 115.3 2000 .347 115.2 2100 .247 119.8 2200 .141 142.0 2300 .200 -160.2 2400 .425 -159.8 2500 .634 -179.2 2600 .738 ...
Page 4
FLL810IQ-3C L-Band High Power GaAs FET 6 4-R1.3±0.2 Case Style "IQ" 24±0.35 20.4±0 45° 3 4-2 6.0 14.9±0.2 4 2.4±0.15 4-0 Gate 3: Source 4, 5: Drain Unit: mm (inches) ...