2sj0146 Panasonic Corporation of North America, 2sj0146 Datasheet
2sj0146
Manufacturer Part Number
2sj0146
Description
Silicon P-channel Mos Fet
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SJ0146.pdf
(3 pages)
Silicon MOS FETs (Small Signal)
2SJ146
Silicon P-Channel MOS FET
For switching
*
V
t
GS
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Forward transfer admittance
Drain to Source ON-resistance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Turn-off time
on
High-speed switching
Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
Features
Absolute Maximum Ratings
Electrical Characteristics
, t
= – 5V
off
50
measurement circuit
Parameter
Parameter
V
out
400
V
DD
= – 5V
Symbol
V
V
I
I
P
T
T
Symbol
I
I
V
V
| Y
R
C
C
C
t
t
on
off
D
DP
DSS
GSS
D
ch
stg
DS(on)
iss
oss
rss
DSS
GSO
DSS
th
*
fs
*
(Ta = 25°C)
|
(Ta = 25°C)
V
V
I
V
V
V
V
V
V
D
DD
DD
DS
GS
DS
DS
GS
DS
55 to +150
Ratings
= 100 A, V
V
= 30V, V
= 8V, V
= 5V, I
= 10V, I
= 5V, I
= 5V, V
= 5V, V
= 5V, V
V
150
150
out
100
200
in
50
8
Conditions
D
D
GS
GS
DS
GS
D
= 100 A
= 10mA
GS
t
on
= 0 to 5V, R
= 5 to 0V, R
GS
10%
= 10mA, f = 1kHz
= 0
= 0, f = 1MHz
= 0
= 0
Unit
mW
mA
mA
°C
°C
V
V
t
off
90%
L
L
90%
= 400
= 400
10%
Marking Symbol: 4D
1: Gate
2: Source
3: Drain
min
1.5
50
8
0.1 to 0.3
0.65±0.15
0.4±0.2
1
2
13.5
typ
1.5
2.8
Mini Type Package (3-pin)
+0.25
–0.05
+0.2
–0.3
max
150
13
40
60
3.5
10
7
3
1
JEDEC: TO-236
3
EIAJ: SC-59
0.65±0.15
unit: mm
Unit
mS
pF
pF
pF
ns
ns
V
V
A
A
1
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2sj0146 Summary of contents
Page 1
Silicon MOS FETs (Small Signal) 2SJ146 Silicon P-Channel MOS FET For switching Features High-speed switching Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. Absolute Maximum Ratings Parameter Symbol Drain to Source breakdown voltage V ...
Page 2
Silicon MOS FETs (Small Signal 240 200 160 120 100 120 140 160 Ambient temperature Ta ( ˚ iss oss rss DS ...
Page 3
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...