2sj0674g Panasonic Corporation of North America, 2sj0674g Datasheet
2sj0674g
Manufacturer Part Number
2sj0674g
Description
Silicon P-channel Mos Fet
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SJ0674G.pdf
(4 pages)
Silicon MOS FETs (Small Signal)
2SJ0674G
Silicon P-channel MOS FET
For switching circuits
Features
Absolute Maximum Ratings T
Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2008
Low ON resistance R
High-speed switching
SSSMini type package, allowing downsizing of the equipment and
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Peak drain current
Power dissipation
Channel temperature
Storage temperature
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Short-circuit input capacitance
(Common source)
Short-circuit output capacitance
(Common source)
Reverse transfer capacitance
(Common source)
Turn-on time
Turn-off time
automatic insertion through the tape packing
2. * : t
on
*
, t
*
Parameter
off
Parameter
measurement circuit
V
GS
on
= 0 V to −3 V
a
= 25°C±3°C
50 Ω
a
= 25°C
This product complies with the RoHS Directive (EU 2002/95/EC).
Symbol
V
V
T
I
T
P
I
Symbol
DSS
GSS
DP
D
stg
ch
R
D
Y
V
I
I
V
C
C
DS(on)
C
t
DSS
GSS
t
DSS
off
on
TH
oss
iss
rss
fs
V
OUT
–55 to +125
100 µF
280 Ω
Rating
I
V
V
I
I
I
I
V
V
V
-100
-200
D
D
D
D
D
-30
±12
100
125
DD
DD
DS
GS
DS
= -10 mA, V
= -1.0 mA, V
= -10 mA, V
= -10 mA, V
= -10 mA, V
= -20 V, V
= ±10 V, V
= -3 V, V
= -3 V , V
= -3 V , V
SJF00060BED
V
GS
GS
DD
GS
Unit
mW
Conditions
mA
mA
°C
°C
GS
= 0 V to -3 V , I
= -3 V to 0 V , I
GS
DS
V
V
DS
GS
GS
DS
= 0, f = 1 MHz
= −3.0 V
= 0
= 0
= 0
= -2.5 V
= -4.0 V
= -3 V, f = 1 kHz
= -3.0 V
V
D
D
V
OUT
= -10 mA
= -10 mA
GS
Package
Marking Symbol: 5U
Code
Pin Name
SSSMini3-F2
1: Gate
2: Source
3: Drain
t
on
- 0.5
10%
Min
-30
20
90%
t
off
-1.0
Typ
300
400
13
40
12
13
90%
9
7
10%
Max
-1.0
-1.5
±10
30
18
Unit
mS
mA
mA
pF
pF
pF
ns
ns
W
V
V
1
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2sj0674g Summary of contents
Page 1
... This product complies with the RoHS Directive (EU 2002/95/EC). Silicon MOS FETs (Small Signal) 2SJ0674G Silicon P-channel MOS FET For switching circuits Features Low ON resistance R on High-speed switching SSSMini type package, allowing downsizing of the equipment and automatic insertion through the tape packing ...
Page 2
... D DS −100 T = 25° −3. −80 −2.75 V −2.50 V −60 −2.25 V −40 −2.00 V − −2 − Drain-source voltage V DS 2SJ0674G R DS(on) -VGS R V DS(on − 85°C a 25°C −25° −2 −4 −6 − Gate-source voltage V ...
Page 3
... This product complies with the RoHS Directive (EU 2002/95/EC). SSSMini3-F2 1.20 ±0.05 +0.05 0.30 − 0. (0.4) (0.4) 0.80 ±0.05 +0.05 0.20 − 0.02 SJF00060BED 2SJ0674G Unit: mm +0.05 0.13 − 0.02 3 ...
Page 4
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...