Silicon MOS FETs (Small Signal)
2SJ0674
Silicon P-channel MOS FET
For switching circuits
Features
Absolute Maximum Ratings T
Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2008
Low ON resistance R
High-speed switching
SSSMini type package, allowing downsizing of the equipment and
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Peak drain current
Power dissipation
Channel temperature
Storage temperature
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Short-circuit input capacitance
(Common source)
Short-circuit output capacitance
(Common source)
Reverse transfer capacitance
(Common source)
Turn-on time
Turn-off time
automatic insertion through the tape packing
2. * : t
on
*
, t
*
Parameter
off
Parameter
measurement circuit
V
GS
on
= 0 V to −3 V
a
= 25°C±3°C
50 Ω
a
= 25°C
This product complies with the RoHS Directive (EU 2002/95/EC).
Symbol
V
V
T
I
T
P
I
Symbol
DSS
GSS
DP
D
stg
ch
R
D
Y
V
I
I
V
C
C
DS(on)
C
t
DSS
GSS
t
DSS
off
on
TH
oss
iss
rss
fs
V
OUT
–55 to +125
100 µF
280 Ω
Rating
I
V
V
I
I
I
I
V
V
V
-100
-200
D
D
D
D
D
-30
±12
100
125
DD
DD
DS
GS
DS
= -10 mA, V
= -1.0 mA, V
= -10 mA, V
= -10 mA, V
= -10 mA, V
= -20 V, V
= ±10 V, V
= -3 V, V
= -3 V , V
= -3 V , V
SJF00045BED
V
GS
GS
DD
GS
Unit
mW
Conditions
mA
mA
°C
°C
GS
= 0 V to -3 V , I
= -3 V to 0 V , I
GS
DS
V
V
DS
GS
GS
DS
= 0, f = 1 MHz
= −3.0 V
= 0
= 0
= 0
= -2.5 V
= -4.0 V
= -3 V, f = 1 kHz
= -3.0 V
V
D
D
V
OUT
= -10 mA
= -10 mA
GS
Package
Marking Symbol: 5U
Code
Pin Name
SSSMini3-F1
1: Gate
2: Source
3: Drain
t
on
- 0.5
10%
Min
-30
20
90%
t
off
-1.0
Typ
300
400
13
40
12
13
90%
9
7
10%
Max
-1.0
-1.5
±10
30
18
Unit
mS
mA
mA
pF
pF
pF
ns
ns
W
V
V
1