si3831dv Vishay, si3831dv Datasheet
si3831dv
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si3831dv Summary of contents
Page 1
... Gate drive is facilitated by negatively biasing the gate relative to the body potential. The off-state is achieved by biasing the gate to the most positive supply voltage or to the body potential. The Si3831DV is available in a 6-pin TSOP-6 package rated for the –25 to 85°C commercial temperature range. ...
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... Si3831DV Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION S/D (6) P-Channel MOSFET Body G Bias (3) Generator ESD Protection D/S BODY SUBSTRATE (GND) (4) (1) FIGURE 3. ABSOLUTE MAXIMUM RATINGS (T Parameter a Drain-Source Voltage, Source-Drain Voltage Source-Body/Drain-Body/Gate-Body Voltage Body-Substrate Voltage Continuous Drain-to-Source Current (T Continuous Drain-to-Source Current (T ...
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... –1 –4 GEN G Load IN FIGURE 6. Gate Buffer Referenced to Body Bias Pin Si3831DV Vishay Siliconix Min Typ Max Unit –0 "100 – –5 – –3 0.130 0.170 ...
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... Si3831DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics thru – Drain-to-Source Voltage (V) DS On-Resistance vs. Drain Current 0 – Drain Current (A) D Gate Charge 4 2 3.6 2.7 1.8 0 ...
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... On-Resistance vs. Gate-to-Source Voltage 0.5 0.4 0 0.2 0.1 0 1.2 1.4 1 100 125 150 0.01 –2 – Square Wave Pulse Duration (sec) Si3831DV Vishay Siliconix – Gate-to-Source Voltage (V) GS Single Pulse Power 0.10 1.00 10.00 Time (sec) Notes ...
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... Si3831DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED –2 –6 –10 www.vishay.com S FaxBack 408-970-5600 2-6 Bi-Directional Blocking Drain-Source Voltage V = –2 –12 –8 – – Drain-to-Source Voltage ( Document Number: 70785 S-56947—Rev. C, 28-Dec-98 ...