si3831dv Vishay, si3831dv Datasheet - Page 2

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si3831dv

Manufacturer Part Number
si3831dv
Description
Bi-directional P-channel Mosfet/power Switch
Manufacturer
Vishay
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3831DV
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
si3831dv-T1-E3
Manufacturer:
U&T
Quantity:
1 920
Notes
a.
b.
c.
www.vishay.com S FaxBack 408-970-5600
2-2
Si3831DV
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage, Source-Drain Voltage
Source-Body/Drain-Body/Gate-Body Voltage
Body-Substrate Voltage
Continuous Drain-to-Source Current (T
Continuous Drain-to-Source Current (T
Pulsed Drain-to-Source Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
RECOMMENDED OPERATING RANGE
Drain-Source Voltage
Gate-Drain,/Gate-Source Voltage
Source-Body/Drain-Body/Gate-Body Voltage
Drain-to-Source Current
Body-Source Current
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Bi-directional.
Surface Mounted on FR4 Board, t v 5 sec.
Surface Mounted on FR4 Board, Steady–State.
(3)
G
P-Channel MOSFET
Protection
ESD
a
a, b
b
b
S/D
D/S
(6)
(4)
b
b
a
FIGURE 3.
BODY
J
J
= 150_C)
= 150_C)
(1)
Generator
a
Parameter
Parameter
Body
Parameter
Bias
SUBSTRATE (GND)
a, b
a, b
(2, 5)
A
= 25_C UNLESS OTHERWISE NOTED)
T
T
T
T
A
A
A
A
= 25_C
= 70_C
= 25_C
= 70_C
3 mm
BODY
SUB
G
V
V
SB
SB
Symbol
Symbol
Symbol
V
V
, V
T
, V
V
DS
GD
R
R
J
V
BSUB
I
I
I
P
P
FIGURE 4.
DM
, T
I
I
DS
BS
thJA
thJA
1
2
3
DS
DB
, V
, V
DB
Top View
D
D
D
D
TSOP-6
2.75 mm
stg
, V
, V
DS
GS
GB
GB
6
5
4
–7.0 to +7.0
+7.0 to –0.3
S-56947—Rev. C, 28-Dec-98
0.3 to –7.0
–55 to 150
–5.5 to 5.5
Range
0 to –5.5
0 to –5.5
Limit
0 to 10
Limit
Document Number: 70785
"2.4
"2.0
"2.4
"8
125
1.5
1.0
80
S/D
SUB
D/S
Unit
Unit
Unit
_C/W
C/W
_C
mA
W
W
V
V
A
A
V
V
A

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