sum60n04-05lt Vishay, sum60n04-05lt Datasheet
sum60n04-05lt
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sum60n04-05lt Summary of contents
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... PAK- Ordering Information: SUM60N04-05LT SUM60N04-05LT-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage d Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Continuous Diode Current (Diode Conduction) Avalanche Current b Repetitive Avalanche Energy a Maximum Power Dissipation ...
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... SUM60N04-05LT Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance Sense Diode Forward Voltage Sense Diode Forward Voltage Increase a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...
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... Document Number: 71747 S-80273-Rev. D, 11-Feb- 0.015 25 °C 0.012 125 °C 0.009 0.006 0.003 0.000 80 100 120 SUM60N04-05LT Vishay Siliconix 250 200 150 100 T = 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...
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... SUM60N04-05LT Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1.6 1.2 0.8 0.4 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 1000 100 ° 0.1 0.00001 0.0001 0.001 t (s) in Avalanche Current vs. Time 1.0 0 µ ...
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... Document Number: 71747 S-80273-Rev. D, 11-Feb-08 1000 100 10 0.1 125 150 175 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SUM60N04-05LT Vishay Siliconix Limited by r DS(on ° Single Pulse 0 Drain-to-Source Voltage (V) DS ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...