SUM60N04-12LT-E3 Vishay/Siliconix, SUM60N04-12LT-E3 Datasheet
SUM60N04-12LT-E3
Specifications of SUM60N04-12LT-E3
Related parts for SUM60N04-12LT-E3
SUM60N04-12LT-E3 Summary of contents
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... TO-263, 5 Leads Ordering Information: SUM60N04-12LT SUM60N04-12LT-E3 (Lead (Pb)-free containing terminations are not RoHS compliant, exemptions may apply. Document Number: 71620 S-80272-Rev. C, 11-Feb-08 FEATURES • Temperature-Sense Diodes for Thermal Shutdown I (A) D ® • TrenchFET Power MOSFET a 60 • ...
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... SUM60N04-12LT Vishay Siliconix ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage V Clamp Current GS Continuous Drain Current (T = 175 °C) J Avalanche Current Repetitive Avalanche Energy Source-to-Anode Voltage Source-to-Cathode Voltage a Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS ...
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... D GEN g d(off ° di/dt = 100 A/µ SUM60N04-12LT Vishay Siliconix Min. Typ. Max ± 250 1 50 250 0.0075 0.009 0.0135 0.018 0.0095 0.012 675 735 675 735 25 50 ...
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... SUM60N04-12LT Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 250 thru 200 150 100 Drain-to-Source Voltage (V) DS Output Characteristics Drain Current (A) D Transconductance 3000 2500 C iss 2000 1500 1000 ...
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... Junction Temperature (°C) J Sense Diode Forward Voltage vs. Temperature Document Number: 71620 S-80272-Rev. C, 11-Feb-08 100 125 150 175 = 25 °C J 0.01 0 250 µA F 100 125 150 175 SUM60N04-12LT Vishay Siliconix 100 T = 150 ° 0.3 0.6 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 60 I ...
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... SUM60N04-12LT Vishay Siliconix TYPICAL CHARACTERISTICS OF G-S CLAMPING DIODES 25 °C, unless otherwise noted THERMAL RATINGS 100 T Case Temperature (° Maximum Avalanche and Drain Current vs. Case Temperature 2 1 Duty Cycle = 0.5 ...
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... INPUT R2 22 kΩ Signal Ground The SUM60N04-12LT provides a non-committed diode to allow temperature sensing of the actual MOSFET chip. The addition of one simple comparator and a few other components is all that is required to implement a temperature protected MOSFET. Since it has a very tight tolerance on forward voltage, the forward voltage of the diode can be used to provide to shutdown signal ...
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... SUM60N04-12LT Vishay Siliconix The bias current of 250 µA nominal is derived from the input signal. In this manner, a simple comparator can be used as a driver for normal on/off operation and a fault detector circuit. The circuit used to provide the input signal must therefore be able to source 0.25 mA with no significant voltage drop ...
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Lead Thickness 25 mil –A– 0.010 Detail A NOTES: 1. Plane B includes maximum features of heat sink tab ...
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RECOMMENDED MINIMUM PADS FOR D Return to Index Return to Index Document Number: 72596 Revision: 21-Jan-08 2 PAK: 5-Lead 0.420 (10.668) 0.135 (3.429) 0.027 (0.6861) 0.067 0.040 (1.702) (1.016) Recommended Minimum Pads Dimensions in Inches/(mm) Application Note 826 Vishay Siliconix ...
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ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...