SUM60N04-12LT-E3 Vishay/Siliconix, SUM60N04-12LT-E3 Datasheet - Page 6

• Manufacturer Part Number: SUM60N04-12LT-E3
• Description: MOSFET 40V 60A 110W
• Manufacturer: Vishay/Siliconix

Specifications of SUM60N04-12LT-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 60 A
• Resistance Drain-source Rds (on): 9 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK-5
• Fall Time: 20 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 3.75 W
• Rise Time: 70 ns
• Factory Pack Quantity: 800
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 35 ns

SUM60N04-12LT
Vishay Siliconix
TYPICAL CHARACTERISTICS OF G-S CLAMPING DIODES 25 °C, unless otherwise noted
THERMAL RATINGS
www.vishay.com
6
10
10
10
10
10
10
10
75
60
45
30
15
0.01
10
0
-1
-2
-3
-4
-5
-6
-7
0.1
1
0
2
1
0
10
Maximum Avalanche and Drain Current
0.2
0.1
0.05
0.02
-5
Duty Cycle = 0.5
25
T
50
vs. Case Temperature
C -
Case Temperature (°C)
Single Pulse
75
10
4
-4
100
Normalized Thermal Transient Impedance, Junction-to-Case
I
I
G
G
(mA) at 150 °C
(mA) at 25 °C
125
150
Gate-Source Voltage vs. Gate Current
10
-3
175
Square Wave Pulse Duration (s)
8
V
GS
(V)
10
-2
500
100
10
12
1
0.1
* V
by r
GS
Limited
DS ( on) *
V
minimum V
DS
Single Pulse
- Drain-to-Source Voltage (V)
10
T
Safe Operating Area
C
-1
1
= 25 °C
GS
16
at which r
S-80272-Rev. C, 11-Feb-08
Document Number: 71620
DS(on)
10
is specified
1
1 ms
10 ms
100 ms
DC
10 µs
100 µs
20
100
3