SUM60N04-12LT-E3 Vishay/Siliconix, SUM60N04-12LT-E3 Datasheet - Page 3

• Manufacturer Part Number: SUM60N04-12LT-E3
• Description: MOSFET 40V 60A 110W
• Manufacturer: Vishay/Siliconix

Specifications of SUM60N04-12LT-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 60 A
• Resistance Drain-source Rds (on): 9 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK-5
• Fall Time: 20 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 3.75 W
• Rise Time: 70 ns
• Factory Pack Quantity: 800
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 35 ns

Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 71620
S-80272-Rev. C, 11-Feb-08
MOSFET SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
V
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Sense Diode Forward Voltage
Sense Diode Forward Voltage Increase
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristics T
Continuous Current
Pulsed Current
Forward Voltage
Reverse Recovery Time
GS
Clamp Voltage
c
b
c
a
c
c
c
c
c
a
a
V
Symbol
V
J
r
(BR)DSS
DS(on)
V
V
t
t
I
C
I
V
GS(th)
ΔV
C
C
V
Q
Q
d(on)
d(off)
GSS
I
DSS
= 25 °C, unless otherwise noted
g
Q
R
FD1
FD2
I
SM
t
GS
oss
t
t
rss
SD
iss
S
rr
fs
gs
gd
r
f
g
g
F
C
= 25 °C
V
V
I
V
V
V
D
V
From I
DS
DS
GS
GS
DS
GS
≅ 25 A, V
I
= 40 V, V
= 40 V, V
= 10 V, I
= 10 V, I
F
= 20 V, V
= 0 V, V
V
V
V
V
V
V
b
V
V
= 60 A, di/dt = 100 A/µs
V
DD
I
DS
DS
DS
F
GS
F
DS
GS
DS
GS
Test Conditions
= 125 µA to I
= 60 A, V
= V
= 0 V, V
= 20 V, R
= 40 V, V
= 4.5 V, I
= 0 V, I
= 10 V, I
= 15 V, I
= 0 V, I
I
I
GEN
F
F
D
D
DS
GS
GS
GS
= 250 µA
= 250 µA
GS
= 20 A, T
= 20 A, T
= 10 V, R
, I
= 25 V, f = 1 MHz
= 0 V, T
= 0 V, T
= 10 V, I
G
GS
DS
D
GS
D
D
D
L
GS
= 20 µA
= 1 mA
= 20 A
= 20 A
= 0.8 Ω
= 1 mA
= ± 5 V
= 20 A
= 0 V
F
= 0 V
J
J
= 250 µA
J
J
= 125 °C
= 175 °C
g
D
= 125 °C
= 175 °C
= 2.5 Ω
= 25 A
Min.
675
675
1.2
40
10
25
1
SUM60N04-12LT
0.0075
0.0095
1920
Typ.
560
210
5.5
35
51
12
20
70
35
20
40
Vishay Siliconix
0.0135
± 250
0.009
0.018
0.012
Max.
250
735
735
120
240
4.1
1.4
20
50
50
70
40
70
40
60
60
2
1
www.vishay.com
Unit
mV
nA
µA
nC
pF
ns
ns
V
Ω
S
Ω
A
V
3