sum110n04-2m1p Vishay, sum110n04-2m1p Datasheet
sum110n04-2m1p
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sum110n04-2m1p Summary of contents
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... 0.0024 4 O-263 Ordering Information: SUM110N04-2m1P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current Pulse Single Pulse Avalanche Energy Continuous Source-Drain Diode Current ...
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... SUM110N04-2m1P Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...
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... Capacitance Document Number: 69983 S-80680-Rev. A, 31-Mar-08 New Product 1.5 2.0 2.5 0.0040 0.0032 0.0024 0.0016 T = 125 °C C 0.0008 0.0000 SUM110N04-2m1P Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...
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... SUM110N04-2m1P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1.7 V 1.4 1.1 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 0.010 0.008 0.006 0.004 0.002 0.000 Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 1000 100 10 0.1 0.01 www.vishay.com 4 New Product ...
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... Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SUM110N04-2m1P Vishay Siliconix 100 125 T - Junction to Case (°C) ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...