SUM110N04-03 Vishay Siliconix, SUM110N04-03 Datasheet
SUM110N04-03
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SUM110N04-03 Summary of contents
Page 1
... N-Channel 40-V (D-S) 200_C MOSFET PRODUCT SUMMARY V (V) r (BR)DSS DS(on) 40 0.0028 @ V GS TO-263 Top View Ordering Information: SUM110N04-03- ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 175_C) = 175_C Pulsed Drain Current Avalanche Current b Repetitive Avalanche Energy ...
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... SUM110N04-03 Vishay Siliconix SPECIFICATIONS (T =25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current g a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... S-31061—Rev. C, 26-May- 0.006 55_C C 0.005 25_C 0.004 125_C 0.003 0.002 0.001 0.000 80 100 120 32 40 SUM110N04-03 Vishay Siliconix Transfer Characteristics 250 200 150 100 T = 125_C C 50 25_C Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current ...
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... SUM110N04-03 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2 1.8 D 1.5 1.2 0.9 0.6 0.3 0 100 125 150 175 200 T - Junction Temperature (_C) J Avalanche Current vs. Time 1000 100 150_C 0.1 0.00001 0.0001 0.001 0.01 t (Sec) in www ...
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... Document Number: 71745 S-31061—Rev. C, 26-May-03 1000 100 10 1 0.1 150 175 200 Normalized Thermal Transient Impedance, Junction-to-Case -2 10 Square Wave Pulse Duration (sec) SUM110N04-03 Vishay Siliconix Safe Operating Area Limited by r DS(on 25_C C Single Pulse 0 Drain-to-Source Voltage (V) DS ...