SUM110N04-03 Vishay Siliconix, SUM110N04-03 Datasheet - Page 2

• Manufacturer Part Number: SUM110N04-03
• Description: N-Channel 40-V (D-S) 200C MOSFET
• Manufacturer: Vishay Siliconix

SUM110N04-03
Vishay Siliconix
Notes
a.
b.
c.
www.vishay.com
2
SPECIFICATIONS (T
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristics (T
Continuous Current
Pulsed Current
Forward Voltage
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
c
c
b
g
Parameter
a
c
c
c
c
c
a
a
a
J
=25_C UNLESS OTHERWISE NOTED)
Symbol
V
I
RM(REC)
V
r
(BR)DSS
I
DS(on)
DS(on)
t
t
I
I
C
GS(th)
D(on)
C
C
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
I
Q
Q
g
SM
I
t
oss
t
rss
t
SD
iss
S
rr
fs
gs
gd
r
f
rr
g
C
I
D
V
V
V
V
V
V
= 25_C)
DS
DS
^ 110 A, V
DS
DS
GS
GS
GS
= 30 V, V
= 40 V, V
= 40 V, V
I
= 10 V, I
= 10 V, I
V
= 0 V, V
V
V
F
F
V
V
V
V
DS
V
V
DD
DD
DS
= 85 A, di/dt = 100 A/ms
DS
Test Condition
I
DS
DS
GS
DS
F
= 85 A, V
= 0 V, V
= 30 V, R
= 30 V, R
= V
w 5 V, V
,
= 0 V, I
= 40 V, V
b
= 10 V, I
= 15 V, I
GEN
DS
D
D
,
GS
GS
GS
GS
GS
= 30 A, T
= 30 A, T
= 25 V, f = 1 MHz
, I
= 0 V, T
= 0 V, T
= 10 V, I
= 10 V, R
GS
D
D
GS
L
L
GS
D
= 250 mA
D
GS
= 250 mA
= 0.27 W
= 0.27 W
= "20 V
= 30 A
= 30 A
= 10 V
= 0 V
= 0 V
,
J
J
J
J
D
D
= 125_C
= 200_C
= 125_C
= 200_C
G
= 110 A
m
= 2.5 W
Min
120
2.5
40
30
0.0023
Typ
8250
1380
0.09
850
165
170
110
1.1
3.0
45
65
25
55
60
S-31061—Rev. C, 26-May-03
Document Number: 71745
0.0028
0.0045
0.0056
Max
0.22
100
250
255
165
110
240
1.5
50
10
40
85
90
4
1
5
Unit
mA
nA
mA
mA
pF
nC
mC
ns
ns
ns
W
V
V
A
S
A
A
V
A