si1403dl Vishay, si1403dl Datasheet

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si1403dl

Manufacturer Part Number
si1403dl
Description
P-channel 2.5-v G-s Mosfet
Manufacturer
Vishay
Datasheet

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SI1403DL
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Notes
a.
Document Number: 71072
S-01559—Rev. B, 17-Jul-00
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
DS
–20
20
(V)
0.200 @ V
0.265 @ V
0.180 @ V
J
J
a
a
= 150_C)
= 150 C)
a
a
r
Parameter
Parameter
DS(on)
GS
GS
GS
a
a
= –3.6 V
= –2.5 V
= –4.5 V
(W)
P-Channel 2.5-V (G-S) MOSFET
G
D
D
a
1
2
3
SC-70 (6-LEADS)
SOT-363
Top View
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
T
T
T
T
t v 5 sec
I
New Product
A
A
A
A
D
"1.5
"1.4
"1.2
= 25_C
= 85_C
= 25_C
= 85_C
(A)
6
5
4
D
D
S
Symbol
Symbol
T
R
R
R
V
J
V
I
P
P
, T
DM
thJA
thJA
thJF
I
I
I
GS
DS
Marking Code
D
D
S
D
D
stg
OA XX
Part # Code
Typical
5 secs
Lot Traceability
and Date Code
0.625
0.400
"1.5
"1.2
–0.8
165
180
105
–55 to 150
"12
www.vishay.com S FaxBack 408-970-5600
–20
"5
Steady State
Maximum
Vishay Siliconix
0.568
0.295
"1.4
"1.0
–0.8
200
220
130
Si1403DL
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
A
A
2-1

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si1403dl Summary of contents

Page 1

... 85_C stg Symbol sec R R thJA thJA Steady State Steady State R thJF Si1403DL Vishay Siliconix Lot Traceability and Date Code 5 secs Steady State Unit – "12 "1.4 "1.5 "1.2 "1 "5 –0.8 –0.8 0.625 ...

Page 2

... Si1403DL Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current Drain-Source On-State Resistance Forward Transconductance a Diode Forward Voltage b Dynamic ...

Page 3

... V 300 200 = 4.5 V 100 On-Resistance vs. Junction Temperature 1.6 1.4 1.2 1.0 0.8 0 –50 On-Resistance vs. Gate-to-Source Voltage 0.5 0.4 0.3 0 25_C J 0.1 0 1.0 1.2 0 Si1403DL Vishay Siliconix Capacitance C iss C oss C rss – Drain-to-Source Voltage ( 4 1 – 100 125 150 T – Junction Temperature (_C) ...

Page 4

... Si1403DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0 250 mA D 0.2 0.1 0.0 –0.1 –0.2 –50 – – Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – Normalized Thermal Transient Impedance, Junction-to-Foot ...

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