si1403dl Vishay, si1403dl Datasheet - Page 2

• Manufacturer Part Number: si1403dl
• Description: P-channel 2.5-v G-s Mosfet
• Manufacturer: Vishay

Si1403DL
Vishay Siliconix
Notes
a.
b.
www.vishay.com S FaxBack 408-970-5600
2-2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
D i S
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
4.0
3.2
2.4
1.6
0.8
0
0
b
O S
Parameter
0.8
V
a
a
R
DS
Output Characteristics
i
a
– Drain-to-Source Voltage (V)
V
1.6
GS
a
a
J
= 5 thru 2.5 V
= 25_C UNLESS OTHERWISE NOTED)
2.4
1, 1.5 V
2 V
Symbol
V
r
I
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
g
Q
3.2
t
SD
t
t
rr
fs
gs
gd
r
f
g
4.0
New Product
V
V
DS
I
I
V
D
DS
^ –1 A, V
= –10 V, V
I
F
V
V
= –16 V, V
V
V
V
V
V
10 V V
V
V
GS
1 A V
= –0.8 A, di/dt = 100 A/ms
DS
I
DS
V
GS
GS
DS
S
DS
DD
DD
Test Condition
DS
= –0.8 A, V
= –5 V, V
= –4.5 V, I
= –3.6 V, I
= –2.5 V, I
= V
= –10 V, I
= –16 V, V
= –10 V, R
= 0 V, V
GEN
GS
GS
10 V R
GS
, I
= –4.5 V, I
= –4.5 V, R
D
,
= 0 V, T
GS
GS
D
= –250 mA
D
D
4 5 V I
4 5 V R
D
GS
GS
L
L
= –1.5 A
= –4.5 V
= –1.4 A
= –0.8 A
= –1.5 A
= "12 V
= 10 W
= 0 V
= 0 V
10
J
4.0
3.2
2.4
1.6
0.8
D
= 85_C
G
0
= –1.5 A
= 6 W
0
1 5 A
6
0.5
V
GS
Transfer Characteristics
Min
–0.6
–2
– Gate-to-Source Voltage (V)
1.0
1.5
0.145
0.165
0.220
–0.78
Typ
3.8
3.7
0.9
0.9
25
21
20
20
8
T
C
25_C
S-01559—Rev. B, 17-Jul-00
= –55_C
Document Number: 71072
2.0
"100
Max
0.180
0.200
0.265
–1.1
4.5
–1
–5
12
40
32
30
40
2.5
125_C
Unit
nA
mA
mA
nC
ns
W
V
A
S
V
C
3.0