si4567dy Vishay, si4567dy Datasheet
si4567dy
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si4567dy Summary of contents
Page 1
... Top View Ordering Information: Si4567DY-T1—E3 (Lead (Pb)-Free) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current (10 ms Pulse Width) Source Drain Current Diode Current Source-Drain Current Diode Current ...
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... Si4567DY Vishay Siliconix _ Parameter Static Drain Source Breakdown Voltage Drain-Source Breakdown Voltage V V Temperature Coefficient Temperature Coefficient Temperature Coefficient Temperature Coefficient GS(th) GS( h) Gate Threshold Voltage Gate Threshold Voltage Gate-Body Leakage Gate Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current ...
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... –1 N-Channel N-Channel di/dt = 100 A/ms Channel P-Channel –2 A, di/dt = –100 A/ms Si4567DY Vishay Siliconix a Min Typ P- N-Ch 10 P- ...
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... Si4567DY Vishay Siliconix Output Characteristics thru 0.0 0.5 1.0 1.5 V – Drain-to-Source Voltage (V) DS On-Resistance vs. Drain Current and Gate Voltage 0. 0.05 0.04 0. – Drain Current (A) D Gate Charge ...
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... Safe Operating Area, Junction-to-Ambient 100 *Limited by r DS(on 0 25_C A Single Pulse 0.01 0 – Drain-to-Source Voltage ( minimum which Si4567DY Vishay Siliconix On-Resistance vs. Gate-to-Source Voltage 0. 0.20 0.15 0. 125_C A 0. 25_C A 0. – Gate-to-Source Voltage (V) ...
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... Si4567DY Vishay Siliconix Power De-Rating, Junction-to-Foot 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 – Case Temperature (_C) C *The power dissipation P is based 150_C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for b J(max) cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit. ...
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... Document Number: 73426 S–52241—Rev. B, 24-Oct-05 New Product _ –2 – Square Wave Pulse Duration (sec) –2 – Square Wave Pulse Duration (sec) Si4567DY Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 120_C/W thJA (t) 3 ...
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... Si4567DY Vishay Siliconix Output Characteristics thru 0.0 0.5 1.0 1.5 V – Drain-to-Source Voltage (V) DS On-Resistance vs. Drain Current and Gate Voltage 0.20 0. 0.11 V 0. – Drain Current (A) D Gate Charge ...
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... Safe Operating Area, Junction-to-Ambient 100 *Limited by r DS(on 0 25_C A Single Pulse 0.01 0 – Drain-to-Source Voltage ( minimum which Si4567DY Vishay Siliconix On-Resistance vs. Gate-to-Source Voltage 0 3 0.4 0.3 0 125_C A 0 25_C A 0 – ...
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... Si4567DY Vishay Siliconix Power De-Rating, Junction-to-Foot 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 – Case Temperature (_C) C *The power dissipation P is based 150_C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for b J(max) cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit. ...
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... New Product _ –2 – Square Wave Pulse Duration (sec) –2 – Square Wave Pulse Duration (sec) For related documents such as package/tape drawings, part marking, and reliability data, see Si4567DY Vishay Siliconix Notes Duty Cycle ...
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... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...