si4567dy Vishay, si4567dy Datasheet - Page 9

• Manufacturer Part Number: si4567dy
• Description: N- And P-channel 40-v D-s Mosfet
• Manufacturer: Vishay

Document Number: 73426
S–52241—Rev. B, 24-Oct-05
0.01
–0.0
–0.1
–0.2
–0.3
0.1
0.5
0.4
0.3
0.2
0.1
20
10
1
0.00
–50
–25
Source-Drain Diode Forward Voltage
0.2
V
T
SD
J
0
= 150_C
– Source-to-Drain Voltage (V)
T
Threshold Voltage
0.4
J
– Temperature (_C)
25
50
0.6
I
D
= 250 mA
75
0.8
T
100
J
= 25_C
I
D
*Limited by r
= 5 mA
1.0
0.01
100
_
125
0.1
10
1
0.1
Safe Operating Area, Junction-to-Ambient
*V
1.2
150
DS(on)
New Product
GS
u minimum V
V
DS
– Drain-to-Source Voltage (V)
Single Pulse
1
T
A
= 25_C
GS
at which r
DS(on)
10
0.5
0.4
0.3
0.2
0.1
0.0
80
64
48
32
16
0
0.001
2
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
3
T
A
= 25_C
1 ms
10 ms
100 ms
1 s
10 s
dc
0.01
V
4
GS
100
– Gate-to-Source Voltage (V)
5
Time (sec)
Vishay Siliconix
T
0.1
A
6
= 125_C
7
Si4567DY
I
D
= 3.6 A
8
1
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