si4100dy Vishay, si4100dy Datasheet - Page 3

• Manufacturer Part Number: si4100dy
• Description: N-channel 100-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 69251
S-72062-Rev. A, 08-Oct-07
0.20
0.16
0.12
0.08
0.04
0.00
20
16
12
10
8
4
0
8
6
4
2
0
0
0
0
I
D
= 4.4 A
On-Resistance vs. Drain Current
4
1
3
V
Output Characteristics
DS
V
Q
GS
g
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
V
= 6 V
I
Gate Charge
D
GS
- Drain Current (A)
8
2
6
= 10 thru 7 V
V
DS
= 50 V
12
3
9
V
V
DS
GS
16
12
4
= 80 V
= 10 V
6 V
5 V
4 V
New Product
20
15
5
1000
800
600
400
200
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
20
16
12
8
4
0
0
- 50
0
0
On-Resistance vs. Junction Temperature
- 25
C
V
I
D
GS
1
os s
= 4.4 A
= 6, 10 V
Transfer Characteristics
V
V
2 0
DS
T
GS
0
J
2
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
Capacitance
2 5
T
25 °C
3
C
C
= 125 °C
rss
4 0
5 0
Vishay Siliconix
C
4
is s
7 5
Si4100DY
5
100
www.vishay.com
6 0
- 55 °C
125
6
150
80
7
3