si4100dy Vishay, si4100dy Datasheet - Page 4

• Manufacturer Part Number: si4100dy
• Description: N-channel 100-v D-s Mosfet
• Manufacturer: Vishay

Si4100DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
4.0
3.6
3.2
2.8
2.4
2.0
20
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
Threshold Voltage
- Source-to-Drain Voltage (V)
T
0.4
J
25
- Temperature (°C)
T
J
= 150 °C
0.6
50
75
0.8
I
D
0.01
100
100
= 250 µA
0.1
10
T
1
0.1
J
= 25 °C
1.0
Safe Operating Area, Junction-to-Ambient
* V
125
Single Pulse
T
A
GS
Limited by r
= 25 C
150
1.2
New Product
V
minimum V
DS
1
- Drain-to-Source Voltage (V)
DS(on)
BVDSS Limited
GS
*
at which r
10
DS(on)
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
100
50
40
30
20
10
is specified
0.001
0
100 µs
1 s
10 s
DC
1 ms
10 ms
100 ms
4
On-Resistance vs. Gate-to-Source Voltage
0.01
1000
5
V
GS
Single Pulse Power
- Gate-to-Source Voltage (V)
6
0.1
Time (s)
7
S-72062-Rev. A, 08-Oct-07
Document Number: 69251
1
8
10
I
D
T
T
A
= 4.4 A
A
= 125 °C
= 25 °C
9
100
600
10