si4818dy Vishay, si4818dy Datasheet - Page 2

• Manufacturer Part Number: si4818dy
• Description: Dual N-channel 30-v D-s Mosfet With Schottky Diode
• Manufacturer: Vishay

Si4818DY
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
MOSFET SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate Threshold Voltage
Gate Body Leakage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On State Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Forward Transconductance
Diode Forward Voltage
Diode Forward Voltage
Dynamic
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate-Source Charge
Gate Drain Charge
Gate-Drain Charge
Gate Resistance
Gate Resistance
Turn On Delay Time
Turn-On Delay Time
Rise Time
Rise Time
Turn Off Delay Time
Turn-Off Delay Time
Fall Time
Fall Time
Source Drain Reverse Recovery Time
Source-Drain Reverse Recovery Time
SCHOTTKY SPECIFICATIONS (T
Forward Voltage Drop
Forward Voltage Drop
Maximum Reverse Leakage Current
Junction Capacitance
Guaranteed by design, not subject to production testing.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
a
Parameter
Parameter
b
b
b
b
g
b
b
b
b
Symbol
Symbol
V
V
r
r
I
I
DS(
DS(on)
t
t
t
t
I
I
GS(th)
GS(th)
I
I
V
V
D(
D(on)
Q
Q
Q
Q
d( ff)
d(off)
GSS
GSS
d(
d(on)
DSS
DSS
J
g
g
Q
Q
R
R
t
t
SD
SD
t
t
t
t
rr
f
fs
gs
gd
I
C
r
f
f
V
V
g
g
g
rm
rm
d
= 25_C UNLESS OTHERWISE NOTED).
F
F
T
)
)
)
J
= 25_C UNLESS OTHERWISE NOTED)
V
V
V
V
DS
DS
I
I ^ 1 A V
I
D
D
DS
DS
^ 1 A, V
^ 1 A, V
I
= 15 V, V
= 15 V, V
F
I
F
= 24 V V
= 24 V, V
V
V
V
V
V
= 2.2 A, di/dt = 100 mA/ms
V
V
V
V
V
V
V
V
V
V
V
V
= 1.3 A, di/dt = 100 A/ms
I
DS
DS
GS
GS
GS
S
DS
DS
DS
DS
DS
DS
DD
DD
DD
DD
GS
DS
DS
I
S
= 1.3 A, V
V
I
V
= V
= V
= 1 A, V
F
= 4.5 V, I
= 4.5 V, I
= 5 V V
= 5 V, V
= 10 V, I
Test Condition
r
= 0 V V
= 0 V, V
= 24 V V
= 24 V, V
= 15 V, R
= 15 V, R
= 15 V, R
= 10 V, I
= 15 V, I
= 15 V, I
r
= 1.0 A, T
= - 30 V, T
Channel-1
Channel 1
Channel-2
Channel 2
Channel 1
Channel-1
GEN
Channel-2
Channel-2
GEN
Test Condition
= 30 V, T
GS
GS
GS
GS
GS
GS
I
, I
V
V
F
= 10 V, R
= 10 V, R
= 5 V, I
I
r
r
= 0 V T
= 0 V, T
= 5 V, I
D
D
GS
= 1.0 A
GS
GS
GS
GS
10 V R
= 30 V
= 10 V
D
D
D
GS
D
GS
GS
D
D
= 250 mA
= 250 mA
L
L
L
L
= 6.3 A
= 9.5 A
= 9.5 A
= 6.3 A
= 0 V
= 15 W
= 15 W
= 15 W
J
= 20 V
= 20 V
= 10 V
= 10 V
= 5.4 A
= 8.2 A
J
J
= 0 V
= 0 V
= 0 V
= 100_C
= 125_C
= 125_C
D
D
J
J
G
G
= 6.3 A
= - 9.5 A
= 85_C
= 85_C
= 6 W
= 6 W
6 W
Ch-1
Ch-2
Ch-1
Ch 1
Ch-2
Ch-1
Ch 1
Ch-2
Ch-1
Ch 1
Ch-2
Ch-1
Ch 1
Ch-2
Ch-1
Ch 1
Ch-2
Ch-1
Ch 1
Ch-2
Ch-1
Ch 1
Ch-2
Ch-1
Ch 1
Ch-2
Ch-1
Ch-2
Ch-1
Ch 1
Ch-2
Ch-1
Ch 1
Ch-2
Ch-1
Ch 1
Ch-2
Ch-1
Ch 1
Ch-2
Ch-1
Ch 1
Ch-2
Ch-1
Ch 1
Ch-2
Ch-1
Ch 1
Ch-2
Ch-1
Ch 1
Ch-2
Min
Min
0.8
1.0
1.5
0.5
20
30
0.004
Typ
0.47
0.36
0.7
3.0
50
0.0125
0.0165
S-31062—Rev. B, 26-May-03
Typ
0.018
0.024
0.47
1.75
0.7
8.0
5.3
3.2
4.6
17
28
15
10
15
26
44
12
30
32
Document Number: 71122
5
5
8
a
Max
0.100
0.50
0.42
0.0155
0.0205
10
20
Max
0.022
0.030
2000
100
100
100
1.1
0.5
6.1
2.6
15
12
23
20
30
10
10
50
80
16
24
60
70
1
Unit
Unit
mA
pF
nA
nA
mA
mA
nC
nC
V
V
ns
ns
W
W
W
W
V
V
A
A
S
S
V
V