si4818dy Vishay, si4818dy Datasheet - Page 6

• Manufacturer Part Number: si4818dy
• Description: Dual N-channel 30-v D-s Mosfet With Schottky Diode
• Manufacturer: Vishay

Si4818DY
Vishay Siliconix
www.vishay.com
6
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
- 0.0
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
40
10
10
0.6
0.4
0.2
1
8
6
4
2
0
0.0
0
- 50
V
I
0.2
D
- 25
DS
Source-Drain Diode Forward Voltage
= 9.5 A
= 15 V
6
V
T
SD
J
Q
0.4
0
= 150_C
g
- Source-to-Drain Voltage (V)
T
Threshold Voltage
- Total Gate Charge (nC)
J
- Temperature (_C)
25
Gate Charge
12
0.6
50
0.8
I
D
18
= 250 mA
75
T
1.0
J
= 25_C
100
24
1.2
125
1.4
30
150
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.05
0.04
0.03
0.02
0.01
0.00
100
- 50
80
60
40
20
0
0.001
0
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
- 25
V
I
Single Pulse Power, Junction-to-Ambient
D
GS
= 9.5 A
= 10 V
T
2
V
J
0
GS
0.01
- Junction Temperature (_C)
- Gate-to-Source Voltage (V)
25
4
Time (sec)
50
0.1
S-31062—Rev. B, 26-May-03
75
Document Number: 71122
6
CHANNEL−2
I
100
D
= 9.5 A
1
8
125
150
10
10