si4497dy Vishay, si4497dy Datasheet - Page 3

• Manufacturer Part Number: si4497dy
• Description: P-channel 30 V D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 65748
S10-0639-Rev. A, 22-Mar-10
0.0045
0.0040
0.0035
0.0030
0.0025
0.0020
70
56
42
28
14
10
0
8
6
4
2
0
0.0
0
0
I
D
V
= 20 A
On-Resistance vs. Drain Current
GS
0.5
16
40
V
= 10 V thru 4 V
DS
Output Characteristics
V
Q
DS
- Drain-to-Source Voltage (V)
g
V
I
V
- Total Gate Charge (nC)
D
GS
= 10 V
GS
- Drain Current (A)
Gate Charge
1.0
32
= 10 V
80
= 4.5 V
V
DS
V
= 15 V
GS
= 3 V
1.5
120
48
V
DS
= 20 V
160
2.0
64
200
2.5
80
12 000
9600
7200
4800
2400
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
0
- 50
0
0
C
On-Resistance vs. Junction Temperature
rss
T
C
- 25
I
D
C
oss
= 20 A
= 125 °C
T
C
1
6
V
V
= 25 °C
DS
GS
Transfer Characteristics
T
0
J
C
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
iss
25
Capacitance
12
2
50
T
Vishay Siliconix
C
= - 55 °C
18
3
75
V
Si4497DY
GS
= 10 V
V
100
www.vishay.com
GS
24
4
= 4.5 V
125
150
30
5
3