si4497dy Vishay, si4497dy Datasheet - Page 4

• Manufacturer Part Number: si4497dy
• Description: P-channel 30 V D-s Mosfet
• Manufacturer: Vishay

Si4497DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.4
- 0.1
0.01
100
0.8
0.5
0.2
0.1
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
T
0.2
J
= 150 °C
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
I
D
0.6
50
= 250 μA
T
J
75
= 25 °C
0.8
0.01
100
0.1
10
Limited by R
1
0.01
100
* V
Single Pulse
I
1.0
D
T
A
GS
= 5 mA
125
= 25 °C
> minimum V
DS(on)
V
DS
0.1
1.2
150
Safe Operating Area
*
- Drain-to-Source Voltage (V)
GS
at which R
1
BVDSS Limited
0.020
0.016
0.012
0.008
0.004
0.000
DS(on)
200
160
120
80
40
10
0
0
0
0 .
is specified
0
1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1 s
10 s
DC
2
100
V
0.01
GS
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
S10-0639-Rev. A, 22-Mar-10
Document Number: 65748
6
I
D
T
T
1
J
= 20 A
J
= 125 °C
= 25 °C
8
10
10